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KBPC2506S

Description
25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size62KB,2 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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KBPC2506S Overview

25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

MCC
Features
  omponents
21201 Itasca Street Chatsworth

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KBPC2500S
THRU
KBPC2510S
25 Amp Single Phase
Bridge Rectifier
50 to 1000 Volts
KBPC
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Designed for Saving Mounting Space
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
MCC
Catalog
Number
KBPC2500S
KBPC2501S
KBPC2502S
KBPC2504S
KBPC2506S
KBPC2508S
KBPC2510S
Device
Marking
KBPC2500S
KBPC2501S
KBPC2502S
KBPC2504S
KBPC2506S
KBPC2508S
KBPC2510S
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
I
F(AV)
I
FSM
25A
300A
T
C
=
60°C
8.3ms, half sine
V
F
1.2V
I
FM
= 12.5A per
element;
T
A
= 25°C
DIM
A
B
C
D
E
G
H
INCHES
MIN
1.12
.432
.547
.752
.201
.047
.120
DIMENSIONS
MM
MIN
28.40
10.97
13.90
19.10
5.10
1.20
3.05
Maximum DC
Reverse Current At
I
R
10µA
T
A
= 25°C
Rated DC Blocking
1.0mA T
A
= 100°C
Voltage
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
MAX
1.13
.442
---
---
---
---
.142
MAX
28.70
11.23
---
---
---
---
3.60
NOTE
www.mccsemi.com

KBPC2506S Related Products

KBPC2506S KBPC2510S KBPC2508S KBPC2504S KBPC2502S KBPC2501S KBPC2500S
Description 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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