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KBP204

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size132KB,3 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Download Datasheet Parametric Compare View All

KBP204 Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

KBP204 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerComchip Technology
Reach Compliance Codecompli
Silicon Bridge Rectifiers
COMCHIP
www.comchiptech.com
KBP200 Thru 2010
Reverse Voltage: 50 - 1000 Volts
Forward Current: 2.0 Amp
KBP
Features
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Ideal for Printed Circuit Boards
Mechanical Data
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
KBP
Dim
Min
Max
14.22
15.24
A
10.67
11.68
B
15.20
-
C
4.57
5.08
D
3.60
4.10
E
2.16
2.67
G
0.76
0.86
H
1.52
-
I
11.68
12.70
J
12.70
-
K
3.2 X 45° Typical
L
All Dimensions in mm
Maximum Ratings and Electrical Characterics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Revers e Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ T
A
= 50°C (Note
1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rate load
(JEDEC Method)
Forward Voltage (per element) @I
F
= 2.0A
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Rating for Fusing (t<8.3ms)
Typical Junction Capacitance per element (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
I
2
t
Cj
R
JA
Tj, T
STG
35
70
140
280
2.0
60
1.1
10
500
15
25
30
-55 to +160
420
560
700
V
A
A
V
uA
A
2
s
pF
K/W
°C
50
100
200
400
600
800
1000
V
KBP
200
KBP
201
KBP
202
KBP
204
KBP
206
KBP
208
KBP
2010
UNIT
Note:
1. Leads maintained at ambient temperature at a distance of 9.5mm from the cas e.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to am bient mounted on PC board with 12mm
2
copper pad.
MDS0306002A
Page 1

KBP204 Related Products

KBP204 KBP208 KBP206 KBP202 KBP2010 KBP201 KBP200
Description 2 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER,1-PHASE FULL-WAVE,800V V(RRM),BR-7W 2 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
Reach Compliance Code compli compliant compliant compli compli compliant compliant

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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