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KBL404

Description
4 A, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size20KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

KBL404 Overview

4 A, SILICON, BRIDGE RECTIFIER DIODE

KBL404 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
package instructionR-PSIP-W4
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Minimum breakdown voltage400 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineTS 16949
Maximum repetitive peak reverse voltage400 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
KBL400 - KBL410
PRV : 50 - 1000 Volts
Io : 4.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
KBL
0.77 (19.56)
0.73 (18.54)
0.825 (20.95)
0.605 (15.36)
+
AC
AC
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
0.200 (5.08)
0.190 (4.82)
0.265 (6.73 )
0.235 (5.97)
0.085 (2.16)
0.065 (1.65)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 5.15 grams
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc=50
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
KBL
400
50
35
50
KBL
401
100
70
100
KBL
402
200
140
200
KBL
404
400
280
400
4.0
KBL
406
600
420
600
KBL
408
800
560
800
KBL
410
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
I
FSM
200
166
1.1
10
1.0
10
- 50 to + 150
- 50 to + 150
Amps.
AS
Volts
2
It
V
F
I
R
I
R(H)
2
Maximum Forward Voltage per Diode at I
F
= 4 Amps.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
µ
A
mA
Typical Thermal Resistance ( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
R
θ
JA
T
J
T
STG
°
C/W
°
C
°
C
Notes :
1 ) Thermal resistance from Junction to Ambient with units mounted on a 3" X 3" X 0.11" THK ( 7.5cm X 7.5cm X 0.3cm ) Cu. plate.
UPDATE : APRIL 23,1998

KBL404 Related Products

KBL404 KBL410 KBL408 KBL406 KBL402 KBL401 KBL400
Description 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
package instruction R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
Reach Compliance Code compli compli compli compliant compli compli compli
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 400 V 1000 V 800 V 600 V 200 V 100 V 50 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4 R-PSIP-W4
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Guideline TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949 TS 16949
Maximum repetitive peak reverse voltage 400 V 1000 V 800 V 600 V 200 V 100 V 50 V
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
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