SemiWell
Semiconductor
Bi-Directional Triode Thyristor
STP16A60
Symbol
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 16 A )
◆
High Commutation dv/dt
◆
Non-isolated Type
◆
○
2.T2
▼
▲
○
3.Gate
1.T1
○
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
TO-220
1
2
3
Absolute Maximum Ratings
Symbol
V
DRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
T
C
= 98 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
16
155/170
120
5.0
0.5
2.0
10
- 40 ~ 125
- 40 ~ 150
2.0
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I
2
t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Units
V
A
A
A
2
s
W
W
A
V
°C
°C
g
Feb, 2003. Rev. 2
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
1/5
STP16A60
Electrical Characteristics
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Junction to case
T
J
= 125 °C, V
D
= 1/2 V
DRM
T
J
= 125 °C, [di/dt]c = -8.0 A/ms,
V
D
=2/3 V
DRM
Gate Trigger Voltage
V
D
= 6 V, R
L
=10
Ω
Gate Trigger Current
V
D
= 6 V, R
L
=10
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
J
= 125 °C
I
T
= 25 A, Inst. Measurement
Ratings
Min.
─
─
─
─
─
─
─
─
0.2
10
─
─
Typ.
─
─
─
─
─
─
─
─
─
─
25
─
Max.
2.0
1.4
30
30
30
1.5
1.5
1.5
─
─
─
1.4
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
(dv/dt)c
I
H
R
th(j-c)
mA
V
mA
V
V
V/㎲
mA
°C/W
2/5
STP16A60
Fig 1. Gate Characteristics
Fig 2. On-State Voltage
10
1
V
GM
(10V)
On-State Current [A]
10
2
Gate Voltage [V]
P
GM
(5W)
P
G(AV)
(0.5W)
25
℃
10
0
T
J
= 125 C
o
10
1
I
GM
(2A)
T
J
= 25 C
o
10
-1
V
GD
(0.2V)
1
10
0
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs.
Maximum Power Dissipation
20
o
Fig 4. On State Current vs.
Allowable Case Temperature
130
18
Power Dissipation [W]
16
14
π
θ
360°
θ
Allowable Case Temperature [ C]
2
π
θ
= 180
o
θ
= 150
o
θ
= 120
θ
= 90
θ
= 60
θ
= 30
o
o
o
o
120
110
100
90
12
θ
: Conduction Angle
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
π
θ
θ
θ
= 30
2
π
o
o
80
70
60
360°
θ
: Conduction Angle
θ
θ
θ
θ
θ
10
12
14
16
= 60
o
= 90
o
= 120
o
= 150
o
= 180
18
20
18
20
0
2
4
6
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
Surge On-State Current [A]
150
60Hz
V
GT
(25 C)
V
GT
(t C)
V
1
100
o
o
_
GT3
50Hz
50
V
V
+
GT1
_
GT1
0
0
10
10
1
10
2
0.1
-50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
3/5
STP16A60
Fig 7. Gate Trigger Current vs.
Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
Transient Thermal Impedance [ C/W]
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
I
+
GT1
I
I
0.1
-50
_
GT3
_
GT1
0
50
100
o
150
0.1
-2
10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10Ω
10Ω
10Ω
▼
▲
6V
●
▼
▲
A
●
▼
▲
A
●
6V
6V
A
V
●
R
G
V
●
R
G
V
●
R
G
Test Procedure
Ⅰ
Test Procedure
Ⅱ
Test Procedure
Ⅲ
4/5
STP16A60
TO-220 Package Dimension
Dim.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
mm
Typ.
Inch
Typ.
Min.
9.7
6.3
9.0
12.8
1.2
Max.
10.1
6.7
9.47
13.3
1.4
Min.
0.382
0.248
0.354
0.504
0.047
Max.
0.398
0.264
0.373
0.524
0.055
1.7
2.5
3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6
3.6
3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0
0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024
0.067
0.098
0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039
0.142
φ
E
B
A
C1.0
H
I
φ
F
C
M
G
1
D
2
3
L
1. T1
2. T2
3. Gate
N
O
J
K
5/5
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