Photocoupler
K4N25G • K4N25H
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62
6
5
4
0.25
6.4
DIMENSION
(Unit : mm)
0.51Min.
3.8
• TTL Compatible Output
• Collector-Emitter Voltage : Min.50V
• Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V)
• Electrical Isolation Voltage : AC5000Vrms
• UL Recognized File No. E107486
• K4N25G - No Base Connection,
K4N25H - With Base Connection
6.4
0.25
FEATURES
0.25
1
8.9 0.25
Orientation Mark
3
0
-15
0.25
K4N25G
PIN NO. AND INIERNAL
CONNECION DIAGRAM
4
5
6
1
2.7Min.
0.5
2.54
0.25
1.2
2
5
3
4
APPLICATIONS
• Interface between two circuits of different potential
• Vending Machine, Copiers
• Measuring Instrument
• Home Appliances
K4N25H
6
1
2
3
MAXIMUM RATINGS
Parameter
Forward Current
Input
Reverse Voltage
Peak Forward Current
Power Dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Output
Collector-Base Breakdown Voltage**
Emitter-Base Breakdown Voltage**
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage
Storage Temperature
Operating Temperature
Lead Soldering Temperature
Total Power Dissipation
*3
*2
*1
(Ta=25℃
)
Symbol
I
F
VR
I
FP
P
D
BV
CEO
BV
ECO
BV
CBO
BV
EBO
I
C
P
C
V
iso
T
stg
T
opr
T
sol
P
tot
Rating
50
5
1
70
50
6
80
6
50
150
AC5000
-55~+125
-30~+100
260
200
Unit
mA
V
A
mW
V
V
V
V
mA
mW
V
rms
℃
℃
℃
mW
**
Except for K4N25G
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
1/3
Photocoupler
K4N25G • K4N25H
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Forward Voltage
Input
Reverse Current
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Output
Collector-Base Breakdown Voltage **
Emitter-Base Breakdown Voltage **
Collector Dark Current
Capacitance
Current Transfer Ratio
*4
Symbol
V
F
I
R
C
T
BV
CEO
BV
ECO
BV
CBO
BV
EBO
I
CEO
C
CE
CTR
V
CE(SAT)
C
IO
R
IO
tr
tf
Condition
I
F
=10mA
VR=5V
V=0, f=1MHz
I
C
=0.5mA
I
E
=0.1mA
I
C
=0.1mA
I
E
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=5mA, V
CE
=5V
I
F
=5mA, I
C
=1mA
V=0, f=1MHz
(Ta=25℃ , unless otherwise noted)
Min.
Unit.
Typ.
Max.
-
-
-
50
6
80
6
-
-
50
-
-
-
-
-
1.15
-
30
-
-
-
-
-
10
-
-
1
10
11
3
3
1.30
10
-
-
-
-
-
100
-
600
0.4
-
-
-
-
V
mA
pF
V
V
V
V
nA
pF
%
V
pF
Ω
㎲
㎲
Collector-Emitter Saturation Voltage
Coupled
Input-Output Capacitance
Input-Output Isolation Resistance
Rise Time
Fall Time
** Except for K4N25G
*4. CTR=(I
C
/I
F
) X 100 (%)
RH=40~60%, V=500V
V
CC
=10V, R
L
=100Ω
I
C
=2mA
2/3
Photocoupler
K4N25G • K4N25H
Forward Current vs.
Ambient Temperature
50
Collector Power Dissipation vs.
Ambient Temperature
250
140
Forward Current vs.
Forward Voltage
Forward Current I
F
(mA)
Forward Current I
F
(mA)
40
Collector Power Dissipation P
C
(mW)
200
120
100
T
a
=70℃
80
60
T
a
=25℃
40
T
a
=-55℃
20
30
150
20
100
10
50
0
-20
0
20
40
60
80
100
0
-20
0
0
20
40
60
80
100
0.4
0.8
1.2
1.6
2.0
Ambient Temperature T
a
(℃)
Ambient Temperature T
a
(℃)
Forward Voltage V
F
(V)
Collector Current vs.
Collector-Emitter Voltage
1
T
a
=25℃
40
I
F
=30mA
Dark Current vs.
Ambient Temperature
100
Collector Current vs.
Ambient Temperature
Collector Current I
C
(mA)
Collector current I
C
(mA)
Dark Current I
CEO
(㎂)
I
F
=20mA
10
I
F
=10mA
I
F
=5mA
V
CE
=24V
0.1
30
I
F
=20mA
P
C
(MAX.)
20
I
F
=10mA
V
CE
=10V
0.01
1
I
F
=1mA
I
F
=5mA
10
I
F
=1mA
0
2
4
6
8
10
0.001
0
20
40
60
80
100
0
-20
0
20
40
60
80
Collector-Emitter voltage V
CE
(V)
Ambient Temperature T
a
(℃)
Ambient Temperature T
a
(℃)
Response Time vs.
Load Resistance
500
V
CE
=5V
I
C
=2mA
T
a
=25℃
100
Collector Current vs.
Forward Current
T
a
=25℃
V
CC
=10V
Switching Time Test Circuit
R
V
IN
V
CC
R
L
V
O
Response Time t
r
, t
f
( s)
Collector Current I
C
(mA)
100
10
tr
10
tf
1
Test Circuit
0.1
Input
0.01
Output
10%
1
0.1
0.1
1
10
0.001
0.1
90%
1
10
100
tr
tf
Load Resistance R
L
(㏀)
Forward Current I
F
(mA)
Waveform
3/3
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