Photocoupler
K4N33
DIMENSION
7.62
6
5
4
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
Diode and a Silicon NPN Photo Darlington transistor in a 6-pin
package.
(Unit : mm)
0.25
6.4
FEATURES
• Small Package Size
• Collector-Emitter Voltage : Min.30V
• Current Transfer Ratio : Type 1000% (at I
F
=10mA, V
CE
=10V)
• Electrical Isolation Voltage : AC2500V
rms
• UL Recognized File No. E107486
6.4
0.25
0.25
1
8.9 0.25
Orientation Mark
3
0° -15°
0.25
APPLICATIONS
• Interface between two circuits of different potential
• Telephone Line Receiver, CMOS Logic Interface
• Power Supply Regulators
0.51Min.
3.8
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
6
5
4
2.7Min.
0.5
2.54
0.25
1.2
1
2
3
MAXIMUM RATINGS
Parameter
Forward Current
Input
Reverse Voltage
Peak Forward Current
Power Dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Output
Collector-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage
Storage Temperature
Operating Temperature
Lead Soldering Temperature
Total Power Dissipation
*1. Input current with 300㎲ pulse width, 2% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
*3
*2
*1
Symbol
I
F
V
R
I
FP
P
D
BV
CEO
BV
ECO
BV
ECO
I
C
P
C
V
iso
T
stg
T
opr
T
sol
P
tot
Rating
80
5
3
150
30
5
30
100
150
AC2500
-55~+125
-30~+100
260
250
(Ta=25℃ )
Unit
mA
V
A
mW
V
V
V
mA
mW
V
rms
℃
℃
℃
mW
1/3
Photocoupler
K4N33
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Forward Voltage
Input
Reverse Current
Capacitance
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Output
Collector-Base Breakdown Voltage
Collector Dark Current
Capacitance
Current Transfer Ratio
*4
Symbol
V
F
I
R
C
T
BV
CEO
BV
ECO
BV
CBO
I
CEO
C
CE
CTR
V
CE(SAT)
C
IO
R
IO
t
on
t
off
Condition
I
F
=10mA
VR=5V
V=0, f=1MHz
I
C
=1mA
I
E
=0.1mA
I
C
=0.1mA
I
F
=0, V
CE
=10V
V
CE
=0, f=1MHz
I
F
=10mA, V
CE
=10V
I
F
=50mA, I
C
=2mA
V=0, f=1MHz
(Ta=25
Min.
-
-
-
30
5
30
-
-
500
-
-
-
-
-
, unless otherwise noted)
Unit.
Typ.
Max.
1.15
-
30
-
-
-
-
10
-
-
1
10
11
-
-
1.30
10
-
-
-
-
100
-
-
1.0
-
-
5
100
V
㎂
pF
V
V
V
nA
pF
%
V
pF
Ω
㎲
㎲
Collector-Emitter Saturation Voltage
Coupled
Input-Output Capacitance
Input-Output Isolation Resistance
Turn-on Time
Turn-off Time
*4. CTR=(I
C
/I
F
) X 100 (%)
RH=40~60%, V=500V
V
CC
=10V, R
L
=100Ω
I
C
=50mA, I
F
=200mA
2/3
Photocoupler
K4N33
Forward Current vs.
Ambient Temperature
60
Collector Power Dissipation vs.
Ambient Temperature
250
Forward Current vs.
Forward Voltage
Forward Current I
F
(mA)
140
120
100
T
a
=70℃
50
40
30
20
10
0
-20
Collector Power Dissipation
P
C
(mW)
Forward current I
F
(mA)
200
150
80
60
T
a
=25℃
100
50
0
-20
40
T
a
=-55℃
20
0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
0
20
40
60
80
100
Ambient Temperature T
a
(℃)
Ambient Temperature T
a
(
℃
)
Forward Voltage V
F
(V)
Collector Current vs.
Collector-Emitter Voltage
10
180
T
a
=25℃I
F
=4mA
Dark Current vs.
Ambient Temperature
1000
Collector Current vs.
Forward Current
T
a
=25℃
V
CE
=10V
Collector Current I
C
(mA)
Dark Current I
CEO
(uA)
160
140
120
100
I
F
=3mA
1
Collector Current I
C
(mA)
60
80
100
100
V
CE
=24V
0.1
I
F
=2mA
80
60
40
20
0
2
4
6
I
F
=1mA
V
CE
=10V
10
0.01
8
10
0.001
0
20
40
1
0.1
1
10
100
Collector-Emitter Voltage V
CE
(V)
Ambient Temperature T
a
(℃)
Forward Current I
F
(mA)
Switching Time Test Circuit
V
IN
R
V
CC
R
L
V
O
Test Circuit
Input
Output
10 %
90%
Waveform
3/3
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
