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K4H561638D-GLB0

Description
DDR 256Mb
Categorystorage    storage   
File Size293KB,26 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K4H561638D-GLB0 Overview

DDR 256Mb

K4H561638D-GLB0 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionTBGA, BGA60,9X12,40/32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8
JESD-30 codeR-PBGA-B60
JESD-609 codee0
length15.1 mm
memory density268435456 bi
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals60
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA60,9X12,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.05 mm
self refreshYES
Continuous burst length2,4,8
Maximum standby current0.003 A
Maximum slew rate0.3 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8.1 mm
256Mb
Key Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 60 Ball FBGA package
DDR SDRAM
ORDERING INFORMATION
Part No.
K4H560438D-GC(L)B3
K4H560438D-GC(L)A2
K4H560438D-GC(L)B0
K4H560838D-GC(L)B3
K4H560838D-GC(L)A2
K4H560838D-GC(L)B0
K4H561638D-GC(L)B3
K4H561638D-GC(L)A2
K4H561638D-GC(L)B0
16M x 16
32M x 8
64M x 4
Org.
Max Freq.
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
B3(DDR333@CL=2.5)
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
SSTL2
60 ball FBGA
SSTL2
60 ball FBGA
SSTL2
60 ball FBGA
Interface
Package
Operating Frequencies
- B3(DDR333)
Speed @CL2
Speed @CL2.5
133MHz
166MHz
- A2(DDR266A)
133MHz
133MHz
- B0(DDR266B)
100MHz
133MHz
*CL : Cas Latency
- 1 -
Rev. 2.2 Mar. ’03
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