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Q67040-S4520

Description
75 A, 1200 V, N-CHANNEL IGBT, TO-247AC
Categorysemiconductor    Discrete semiconductor   
File Size449KB,15 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

Q67040-S4520 Overview

75 A, 1200 V, N-CHANNEL IGBT, TO-247AC

Q67040-S4520 Parametric

Parameter NameAttribute value
Number of terminals3
Rated off time700 ns
Maximum collector current75 A
Maximum Collector-Emitter Voltage1200 V
Processing package descriptionGREEN, PLASTIC, TO-247, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionCOLLECTOR
Number of components1
transistor applicationsPOWER control
Transistor component materialssilicon
Channel typeN channel
Transistor typeINSULATED GATE BIPOLAR
Rated on time92 ns
IKW40T120
^
TrenchStop Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
Best in class TO247
Short circuit withstand time – 10µs
Designed for :
G
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
I
C
40A
V
CE(sat),Tj=25°C
1.8V
T
j,max
150°C
E
P-TO-247-3-1
(TO-247AC)
Type
IKW40T120
Package
TO-247AC
Ordering Code
Q67040-S4520
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
T
stg
-
-40...+150
-55...+150
260
°C
1)
Symbol
V
CE
I
C
Value
1200
75
40
Unit
V
A
I
Cpul s
-
I
F
105
105
80
40
I
Fpul s
V
GE
t
SC
P
tot
105
±20
10
270
V
µs
W
V
GE
= 15V,
V
CC
1200V,
T
j
150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Preliminary / Rev. 1 Jul-02
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