K4H1G1638M-TCB0 datasheet, PDF

K4H1G1638M-TCB0: Description128Mb DDR SDRAM; Categorystorage storage; File Size464KB，53 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4H1G1638M-TCB0 Overview

128Mb DDR SDRAM

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	TSSOP, TSSOP66,.46
Reach Compliance Code	compli
Maximum access time	0.75 ns
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	R-PDSO-G66
memory density	1073741824 bi
Memory IC Type	DDR DRAM
memory width	16
Humidity sensitivity level	1
Number of terminals	66
word count	67108864 words
character code	64000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP66,.46
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Celsius)	225
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	2,4,8
Maximum standby current	0.006 A
Maximum slew rate	0.4 mA
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

128Mb DDR SDRAM

DDR SDRAM Specification

Version 1.0

- 1 -

REV. 1.0 November. 2. 2000

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