K4D263238E-GC25 datasheet, PDF

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K4D263238E-GC25: Description1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL; Categorystorage storage; File Size312KB，17 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4D263238E-GC25 Overview

1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

K4D263238E-GC25 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA, BGA144,12X12,32
Contacts	144
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.55 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	S-PBGA-B144
JESD-609 code	e0
length	12 mm
memory density	134217728 bi
Memory IC Type	DDR DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	144
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	4MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA144,12X12,32
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	2.8 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.4 mm
self refresh	YES
Continuous burst length	2,4,8,FP
Maximum standby current	0.11 A
Maximum slew rate	1.21 mA
Maximum supply voltage (Vsup)	2.625 V
Minimum supply voltage (Vsup)	2.375 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	12 mm

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K4D263238E-GC

128M GDDR SDRAM

128Mbit GDDR SDRAM

1M x 32Bit x 4 Banks

Graphic Double Data Rate

Synchronous DRAM

with Bi-directional Data Strobe and DLL

(144-Ball FBGA)

Revision 1.7

November 2003

Samsung Electronics reserves the right to change products or specification without notice.

- 1 -

Rev 1.7 (Nov. 2003)

K4D263238E-GC25 Related Products

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Description	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL	1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	-
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	-
package instruction	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	-
Contacts	144	144	144	144	144	144	-
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	-
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-
Maximum access time	0.55 ns	0.7 ns	0.6 ns	0.6 ns	0.55 ns	0.55 ns	-
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-
Maximum clock frequency (fCLK)	400 MHz	222 MHz	250 MHz	275 MHz	350 MHz	300 MHz	-
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	-
interleaved burst length	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	2,4,8	-
JESD-30 code	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	-
JESD-609 code	e0	e0	e0	e0	e0	e0	-
length	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	-
memory density	134217728 bi	134217728 bi	134217728 bi	134217728 bi	134217728 bi	134217728 bi	-
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	-
memory width	32	32	32	32	32	32	-
Number of functions	1	1	1	1	1	1	-
Number of ports	1	1	1	1	1	1	-
Number of terminals	144	144	144	144	144	144	-
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	-
character code	4000000	4000000	4000000	4000000	4000000	4000000	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	65 °C	65 °C	65 °C	65 °C	65 °C	65 °C	-
organize	4MX32	4MX32	4MX32	4MX32	4MX32	4MX32	-
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	-
Encapsulate equivalent code	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	-
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	-
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	-
power supply	2.8 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-
refresh cycle	4096	4096	4096	4096	4096	4096	-
Maximum seat height	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	-
self refresh	YES	YES	YES	YES	YES	YES	-
Continuous burst length	2,4,8,FP	2,4,8,FP	2,4,8,FP	2,4,8,FP	2,4,8,FP	2,4,8,FP	-
Maximum standby current	0.11 A	0.07 A	0.075 A	0.08 A	0.095 A	0.08 A	-
Maximum slew rate	1.21 mA	0.655 mA	0.71 mA	0.77 mA	0.935 mA	0.83 mA	-
Maximum supply voltage (Vsup)	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	2.625 V	-
Minimum supply voltage (Vsup)	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	2.375 V	-
Nominal supply voltage (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	-
surface mount	YES	YES	YES	YES	YES	YES	-
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	-
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	-
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-
width	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	-

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