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JANTXV2N6766

Description
30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size131KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

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JANTXV2N6766 Overview

30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

JANTXV2N6766 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-3
package instructionFLANGE MOUNT, O-MBFM-P2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)60 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)30 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)120 A
Certification statusNot Qualified
GuidelineMIL-19500/543
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Provisional Data Sheet No. PD-9.338D
HEXFET
®
JANTX2N6766
POWER MOSFET
JANTXV2N6766
[REF:MIL-PRF-19500/543]
[GENERIC:IRF250]
N-CHANNEL
Product Summary
Part Number
JANTX2N6766
JANTXV2N6766
BV
DSS
200V
R
DS(on)
0.085Ω
I
D
30A
200 Volt, 0.085Ω HEXFET
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Features:
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
Œ
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy

Avalanche Current
Œ
Repetitive Avalanche Energy
Œ
Peak Diode Recovery dv/dt
Ž
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6766, JANTXV2N6766
Units
30
19
120
150
1.2
±20
500
30
15
5.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
A
W
W/K

V
mJ
A
mJ
V/ns
o
C
g

JANTXV2N6766 Related Products

JANTXV2N6766 JANTX2N6766
Description 30 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Is it lead-free? Contains lead Contains lead
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon )
Parts packaging code TO-3 TO-3
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Contacts 2 2
Reach Compliance Code unknow compli
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas) 60 mJ 60 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (ID) 30 A 30 A
Maximum drain-source on-resistance 0.09 Ω 0.09 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-204 TO-204
JESD-30 code O-MBFM-P2 O-MBFM-P2
Number of components 1 1
Number of terminals 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL
Package shape ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 120 A 120 A
Certification status Not Qualified Not Qualified
Guideline MIL-19500/543 MIL-19500/543
surface mount NO NO
Terminal form PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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