TIM8596-15 datasheet, PDF - EEWORLD Datasheet

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TIM8596-15: DescriptionX BAND, GaAs, N-CHANNEL, RF POWER, JFET; CategoryDiscrete semiconductor The transistor; File Size85KB，2 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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TIM8596-15 Overview

X BAND, GaAs, N-CHANNEL, RF POWER, JFET

TIM8596-15 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
package instruction	HERMETIC SEALED, 2-11C1B, 2 PIN
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Factory Lead Time	20 weeks
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
Maximum drain current (ID)	11.5 A
FET technology	JUNCTION
highest frequency band	X BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	60 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

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MICROWAVE POWER GaAs FET

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

FEATURES

TIM8596-15

PRELIMINARY

BROAD BAND INTERNALLY MATCHED

HIGH POWER

P1dB=42.0dBm at 8.5GHz to 9.6GHz

HIGH GAIN

G1dB=7.0dB at 8.5GHz to 9.6GHz

HERMETICALLY SEALED PACKAGE

RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )

CHARACTERISTICS

Output Power at 1dB

Compression Point

Power Gain at 1dB

Compression Point

Drain Current

Power Added Efficiency

Channel Temperature Rise

SYMBOL

1dB

= 9

= 8.5 – 9.6GHz

CONDITION

UNIT

dBm

VDS

IDS

Rth(c-c)

MIN.

41.0

6.0



TYP. MAX.



42.0

7.0

4.5



5.5



100

add

∆

Tch

ELECTRICAL CHARACTERISTICS ( Ta= 25° C )

CHARACTERISTICS

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

SYMBOL

GSoff

DSS

GSO

CONDITION

= 2V

= 4.8A

= 145mA

= 3

= 0V

= -145

UNIT

C/W

MIN.



-1.5



-5



TYP.

3000

-3.0

10.0



2.0

MAX.



-4.5

11.5



2.5

th(c-c)

Channel to Case

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Jun. 2002

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