Advance Technical Information
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
IXFR 100N25
V
DSS
I
D25
R
DS(on)
= 250
V
= 87
A
Ω
= 27 mΩ
t
rr
≤
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C (MOSFET chip capability)
= External lead current limit
= 25°C, Note 1
= 25°C
Maximum Ratings
250
250
±20
±30
87
75
400
100
64
3
5
400
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°
C
°
C
°C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
* Patent pending
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
l
l
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
250
2.0
V
4 V
±200
nA
T
J
= 25°C
T
J
= 125°C
100
µA
2 mA
27 mΩ
Applications
l
DC-DC converters
l
l
l
l
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20
V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
Advantages
l
Easy assembly
l
l
Space savings
High power density
© 2001 IXYS All rights reserved
98840 (5/01)
IXFR 100N25
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Notes 2, 3
40
70
9100
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1800
600
42
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 1
Ω
(External), Notes 2, 3
55
110
40
300
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
Notes 2, 3
57
160
0.3
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
ISOPLUS 247 OUTLINE
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= I
T
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive; Note 1
I
F
= I
T
, V
GS
= 0 V, Notes 2, 3
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
100
400
1.5
250
A
A
V
ns
µ
C
A
I
F
= 50A,-di/dt = 100 A/µs, V
R
= 100 V
1.4
10
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
3. I
T
= 50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
Embedded System
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