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UMN10N

Description
0.1 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size160KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

UMN10N Overview

0.1 A, 80 V, 3 ELEMENT, SILICON, SIGNAL DIODE

UMN10N Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-88
package instructionUMD6, SC-88, 6 PIN
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSEPARATE, 3 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeR-PDSO-G6
JESD-609 codee2
Humidity sensitivity level1
Number of components3
Number of terminals6
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse current0.1 µA
Maximum reverse recovery time0.004 µs
Reverse test voltage70 V
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Base Number Matches1
UMN10N
Diodes
Switching diode
UMN10N
Applications
Very fast recovery
External dimensions
(Unit : mm)
2.0±0.1
Each le ad
0.25
+0.1
各リードとも
same dimen sio n
 -0.05
同寸法
(6)
(5)
(4)
0.15
-0.06
+0.1
Land size figure
0.65
0.65
0.1½0.4
Features
1) Small mold type. (UMD6)
2) High reliability
1.25±0.1
2.1±0.1
0½0.1
0.9
(1)
(2)
(3)
0.35
UMD6
0.65
0.65
1.3±0.1
0.7±0.1
0.9±0.1
0.2±0.1
0.7±0.1
Construction
Silicon epitaxial planer
Structure
ROHM : UMD6
JEDEC : SOT-363
JEITA : SC-88
dot (year week factory)
Taping dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
1.75±0.1
0.3±0.1
0½0.1
3.5±0.05
2.45±0.1
8.0±0.2
2.2±0.1
4.0±0.1
2.0±0.05
φ1.1±0.1
1.35±0.1
Absolute maximum ratings
(Ta=25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Forward current repetitive peak (Single)
Average rectified forward current (Single)
Surge current
t=1us
Power dis s ipation
Junction tem perature
Storage tem perature
Sym bol
V
RM
V
R
I
FM
Io
I
surg e
Pd
Tj
Ts tg
Lim its
80
80
300
100
4
200
150
-55 to +150
Unit
V
V
mA
mA
A
mW
Electrical characteristic
(Ta=25°C)
Param eter
Forward voltage
Revers e current
Capacitance between term inal
Revers e recovery tim e
Sym bol
V
F
I
R
Ct
trr
Min.
-
-
-
-
Typ.
-
-
-
-
Max.
1.2
0.1
3.5
4
Unit
V
µA
pF
ns
I
F
=100m A
V
R
=70V
V
R
=6V , f=1MHz
V
R
=6V , IF=5m A , RL=50
Ω
Conditions
2.4±0.1
1.6
1/3

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