N Channel Enhancement Mode MOS Transistors
Product Summary
Part Number
VN2010L
BS107
Siliconix
VN2010L/BS107
V
(BR)DSS
Min (V)
200
r
DS(on)
Max (W)
10 @ V
GS
= 4.5 V
28 @ V
GS
= 2.8 V
V
GS(th)
(V)
0.8 to 1.8
0.8 to 3
I
D
(A)
0.19
0.12
Features
D
D
D
D
D
Low On Resistance: 6
W
Secondary Breakdown Free: 220 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
Benefits
D
D
D
D
D
Low Offset Voltage
Full Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High Temperature
Run Away"
Applications
D
High Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays, Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO 226AA
(TO 92)
S
G
D
1
TO 92 18RM
(TO 18 Lead Form)
D
G
S
1
2
2
3
Top View
VN2010L
3
Top View
BS107
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain Source Voltage
Gate Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Symbol
V
DS
V
GS
T
A
= 25_C
T
A
= 1 0 0
_C
T
A
= 25_C
T
A
= 100_C
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
VN2010L
200
"30
0.19
0.12
0.8
0.8
0.32
156
-55 to 150
BS107
200
"25
0.12
Unit
V
A
0.5
250
Power Dissipation
Maximum Junction to Ambient
Operating Junction and Storage Temperature Range
W
_C/W
_C
Notes
a. Pulse width limited by maximum junction temperature.
P-38283—Rev.
B (08/15/94)
1
VN2010L/BS107
Specifications
a
Limits
VN2010L
Siliconix
BS107
Parameter
Static
Drain Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Drain Leakage Current
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
V
(BR)DSS
V
GS(th)
I
GSS
I
DSX
I
DSS
I
D(on)
r
DS(on)
g
fs
g
os
V
GS
= 0 V, I
D
= 100
mA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 0 V, V
GS
=
"15
V
V
DS
= 70 V, V
GS
= 0.2 V
V
DS
= 130 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V
T
J
= 125_C
V
DS
= 10 V, V
GS
= 10 V
V
GS
= 2.8 V, I
D
= 0.02 A
V
GS
= 4.5 V, I
D
= 0.05 A
T
J
= 125_C
V
DS
= 15 V, I
D
= 0.1 A
V
DS
= 15 V, I
D
= 0.05 A
220
1.2
200
0.8
1.8
"10
200
0.8
3
V
"10
1
0.03
1
100
0.7
6
6
11
180
0.15
125
10
20
0.1
28
nA
Zero G
Z
Gate V l
Voltage D i C
Drain Current
On State Drain Current
c
Drain Source O R i
D i S
On Resistance
c
Forward Transconductance
c
Common Source
Output Conductance
c
mA
A
A
W
S
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
=25 V, V
GS
= 0 V f = 1 MH
25 V
V,
MHz
35
9
1
60
30
15
pF
F
Switching
d
Turn On Time
Turn Off Time
t
ON
t
OFF
V
DD
= 25 V, R
L
= 250
W
I
D
^
0.1 A, V
GEN
= 10 V
R
G
= 25
W
5
21
20
30
ns
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
VNDQ20
2
P-38283—Rev.
B (08/15/94)
Siliconix
VN2010L/BS107
Ohmic Region Characteristics
V
GS
= 10 V
50
5V
I
D
- Drain Current (mA)
4V
6V
3V
40
Typical Characteristics (25_C Unless Otherwise Noted)
0.5
0.4
Output Characteristics for Low Gate Drive
T
J
= 25°C
V
GS
= 2.2 V
2.0 V
T
J
= 25°C
I
D
- Drain Current (A)
0.3
30
1.8 V
1.6 V
1.4 V
0.2
20
0.1
2V
10
1.2 V
1.0 V
0.6 V
0
0
1
2
3
4
5
0
0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain to Source Voltage (V)
500
V
DS
- Drain to Source Voltage (V)
28
24
20
16
12
8
4
0
50 mA
Transfer Characteristics
V
DS
= 15 V
T
J
= -55°C
25°C
r
DS(on)
- On Resistance (
W
)
On Resistance vs. Gate to Source Voltage
T
J
= 25°C
I
D
- Drain Current (mA)
400
125°C
300
I
D
= 500 mA
200
250 mA
100
0
0
1
2
3
4
5
0
4
8
12
16
20
V
GS
- Gate Source Voltage (V)
V
GS
- Gate Source Voltage (V)
r
DS(on)
- Drain Source On Resistance (
W
)
12.5
On Resistance vs. Drain Current
r
DS(on)
- Drain Source On Resistance
(Normalized)
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
Normalized On Resistance
vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 50 mA
10.0
V
GS
= 10 V
7.5
10 mA
5.0
2.5
0
0
0.2
0.4
0.6
0.8
1.0
I
D
- Drain Current (A)
-50
-10
30
70
110
150
T
J
- Junction Temperature (_C)
P-38283—Rev.
B (08/15/94)
3
VN2010L/BS107
10
V
DS
= 5 V
I
D
- Drain Current (mA)
50
C - Capacitance (pF)
T
J
= 150°C
1
40
30
C
oss
20
10
0.01
0
0.4
0.8
-55°C
1.2
1.6
2.0
0
C
rss
Siliconix
Typical Characteristics (25_C Unless Otherwise Noted) (Cont'd)
Threshold Region
60
Capacitance
V
GS
= 0 V
f = 1 MHz
C
iss
0.1
0°C
0
10
20
30
40
50
V
GS
- Gate to Source Voltage (V)
15.0
V
GS
- Gate to Source Voltage (V)
12.5
10.0
7.5
5.0
2.5
0
I
D
= 0.1 A
V
DS
= 100 V
160 V
V
DS
- Drain to Source Voltage (V)
100
50
Gate Charge
Load Condition Effects on Switching
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
20
10
5
t
d(off)
t
r
2
1
t
d(on)
t
f
0.01
0.1
I
D
- Drain Current (A)
1.0
0
250
500
750
1000
1250
Q
g
- Total Gate Charge (pC)
1
Normalized Effective Transient
Thermal Impedance
Normalized Effective Transient Thermal Impedance, Junction to Ambient (TO 226AA)
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
t
1
0.1
0.05
0.02
t
2
1. Duty Cycle, D =
0.01
Single Pulse
0.01
0.1
1
10
100
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
t
1
t
2
1K
10 K
t
1
- Square Wave Pulse Duration (sec)
4
P-38283—Rev.
B (08/15/94)
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