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1N5818R1

Description
Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size192KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

1N5818R1 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

1N5818R1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5817 thru 1N5819
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
Polarity:
Indicated by cathode band
Weight:
0.33 gram (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
Typical junction capacitance (Note 2)
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
T
J
=25
T
J
=100℃
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Cj
dV/dt
R
θJC
R
θJA
T
J
T
STG
0.45
1N5817
20
14
20
1N5818
30
21
30
1
30
0.55
1
10
55
10000
45
100
- 55 to +125
- 55 to +125
0.60
1N5819
40
28
40
Unit
V
V
V
A
A
V
mA
pF
V/μs
O
C/W
O
O
C
C
Document Number: D1307014
Version: F13

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