VTO 110
VTO 175
Three Phase Full Controlled
Rectifier Bridge, B6C
I
dAVM
= 110/167 A
V
RRM
= 1200-1600 V
V
RSM
V
DSM
V
1300
1500
1700
V
RRM
V
DRM
V
1200
1400
1600
Type
E
D
C
A
2
3
1
C
~
D
~
E
~
45
6
VTO 110-12io7 VTO 175-12io7
VTO 110-14io7 VTO 175-14io7
VTO 175-16io7
5
4
6
B
32
Symbol
I
dAV
I
FRMS
, I
TRMS
I
FSM
, I
TSM
Test Conditions
T
C
= 85°C; module
per leg
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
I
2
t
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(di/dt)
cr
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
VTO 110 VTO 175
110
58
1150
1230
1000
1070
6600
6280
5000
4750
150
167
89
1500
1600
1350
1450
11200
10750
9100
8830
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
A/ms
2
1
A
+
B
-
Features
q
q
q
q
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
UL registered E72873
T
VJ
= T
VJM
repetitive, I
T
= 50 A
f =400 Hz, t
P
=200
ms
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive
di
G
/dt = 0.3 A/ms, I
T
= 1/3 • I
dAV
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
¥;
method 1 (linear voltage rise)
t
p
= 30
ms
t
p
= 500
ms
t
p
= 10 ms
£
£
£
Applications
q
q
500
1000
10
A/ms
V/ms
V
W
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
q
Input rectifier for PWM converter
Input rectifier for switch mode power
supplies (SMPS)
Softstart capacitor charging
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
Advantages
q
q
q
T
VJ
= T
VJM
I
T
= I
TAVM
10
5
1
0.5
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
-40...+125
125
-40...+125
50/60 Hz, RMS t = 1 min
t=1s
I
ISOL
£
1 mA
Mounting torque (M6)
Terminal connection torque (M6)
typ.
2500
3000
5-15
5-15
300
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-2
VTO 110
VTO 175
Symbol
I
R
, I
D
V
F
, V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
R
thJC
R
thJH
d
S
d
A
a
Test Conditions
V
R
= V
RRM
; V
D
= V
DRM
I
F
, I
T
= 200 A, T
VJ
= 25°C
For power-loss calculations only
(T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= -40°C
T
VJ
= 25°C
T
VJ
= -40°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
T
VJ
= 25°C
£
£
£
£
£
£
£
£
£
0.65
0.108
0.8
0.133
10
9.4
50
T
VJ
= T
VJM
T
VJ
= 25°C
£
£
£
1.75
0.85
6
1.5
1.6
100
200
0.2
5
450
200
2
0.46
0.077
0.55
0.092
Characteristic Values
VTO 110 VTO 175
5
0.3
1.57
0.85
3.5
mA
mA
V
V
mW
V
V
mA
mA
V
mA
mA
mA
ms
K/W
K/W
K/W
K/W
mm
mm
m/s
2
I
GD
, T
VJ
= 125°C
2
3
5
1
4
6
10
1: I
GT
, T
VJ
= 125°C
V
V
G
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
1
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
0.1
1
10
100
1000
I
G
mA
I
G
= 0.3 A; t
G
= 30
ms
di
G
/dt = 0.3 A/ms
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.3 A; di
G
/dt = 0.3 A/ms
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
Fig. 1 Gate trigger characteristics
120
A
I
dAV
100
VTO 110
80
60
40
20
0
0
50
100
T
C
°C
150
Dimensions in mm (1 mm = 0.0394")
900
A
800
7
Fig. 2
0.7
VTO 110
DC output current at case
temperature
VTO 110
M6x10
I
FSM
30
50 Hz
80% V
RRM
K/W
0.6
Z
thJC
0.5
0.4
700
T
VJ
= 45°C
600
500
94
80
72
26
26
3
0.3
400
T
VJ
= 125°C
300
6.5
0.2
0.1
0.0
10
-3
15
54
27
6.5
C ~
A +
3
2
1
D ~
B -
E ~
200
100
10
-3
4
5
6
7
6 5 5
10
-2
10
-1
12
2.8 x 0.8
M6
10
0
t
s
10
1
10
-2
10
-1
10
0
t
s
10
1
25
66
Fig. 3 Surge overload current
I
FSM
: Crest value, t: duration
Fig. 4 Transient thermal impedance
junction to case (per leg)
© 2000 IXYS All rights reserved
2-2
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