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SMAJ220CAe3-TR13

Description
ESD Suppressors / TVS Diodes Transient Voltage Suppressor
CategoryCircuit protection   
File Size481KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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ESD Suppressors / TVS Diodes Transient Voltage Suppressor

SMAJ220CAe3-TR13 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMicrosemi
Product CategoryESD Suppressors / TVS Diodes
RoHSDetails
PackagingReel
Factory Pack Quantity5000
Unit Weight0.002258 oz
SMAJ5.0e3 to SMAJ440CAe3
400W Transient Voltage Suppressor (TVS) protection device
Main product characteristics
V
WM
V
BR(min)
- V
BR(max)
I
PP
V
CL(MAX)
P
PP
5.0V – 440V
6.40V – 543V
41.7A – 0.6A
9.6V – 713V
400W
RoHS
COMPLIANT
DO-214AC (SMA)
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
ΘJL
R
ΘJA
T
STG
T
J
(1)
(2)
(3)
(4)
(5)
Parameter
Peak power dissipation with a 10/1000µs waveform
(2)(3)
(fig.1)
Peak pulse current with a 10/1000µs waveform
(2)
(fig. 3)
Steady state power dissipation at T
L
= 75ºC, lead lengths 0.375”
(9.5mm)
(3)
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only
(4)
Maximum instantaneous forward voltage at 25A for unidirectional
only
(5)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Storage temperature
Junction temperature
Value
400
See next table
1.0
40
3.5 / 5.0
30
120
-55 to +150
-55 to +150
Unit
W
A
W
A
V
ºC/W
ºC/W
ºC
ºC
All ratings at 25ºC unless specified otherwise
Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25ºC per Fig. 2. rating is 300W above 78V.
Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
Mounted on minimum recommended pad layout
V
F
=3.5V for devices of V
BR
< 220V and V
F
=5.0V maximum for devices of V
BR
> 220V
Copyright
©
2010
Mar Rev C
www.Microsemi.com
1/6
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