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PESDxL4UF; PESDxL4UG;
PESDxL4UW
Low capacitance unidirectional quadruple ESD protection
diode arrays
Rev. 04 — 28 February 2008
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode
arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to
four signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Package
NXP
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
SOT886
SOT886
SOT353
SOT353
SOT665
SOT665
JEITA
-
-
SC-88A
SC-88A
-
-
JEDEC
MO-252
MO-252
-
-
-
-
leadless ultra small
leadless ultra small
very small
very small
ultra small and flat lead
ultra small and flat lead
Package configuration
Type number
1.2 Features
I
I
I
I
ESD protection of up to four lines
Low diode capacitance
Max. peak pulse power: P
PP
= 30 W
Low clamping voltage: V
CL
= 12 V
I
I
I
I
Ultra low leakage current: I
RM
= 5 nA
ESD protection up to 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
PP
= 2.5 A
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
C
d
diode capacitance
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
f = 1 MHz; V
R
= 0 V
-
22
28
pF
-
-
3.3
V
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5.0
V
-
16
19
pF
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
common anode
cathode (diode 4)
6
5
bottom view
4
1
2
3
1
2
3
006aaa156
Simplified outline
Symbol
PESD3V3L4UF; PESD5V0L4UF
6
5
4
PESD3V3L4UG; PESD5V0L4UG
1
2
3
4
5
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
1
2
3
006aaa157
5
4
1
2
3
4
5
PESD3V3L4UW; PESD5V0L4UW
1
2
3
4
5
cathode (diode 1)
common anode
cathode (diode 2)
cathode (diode 3)
cathode (diode 4)
1
2
3
5
4
1
2
3
006aaa157
5
4
PESDXL4UF_G_W_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 February 2008
2 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
-
plastic surface-mounted package; 5 leads
SOT665
SC-88A
XSON6
Description
plastic extremely thin small outline package;
no leads; 6 terminals; body 1
×
1.45
×
0.5 mm
plastic surface-mounted package; 5 leads
Version
SOT886
SOT353
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
A5
A6
L1*
L2*
A2
A1
Type number
PESD3V3L4UF
PESD5V0L4UF
PESD3V3L4UG
PESD5V0L4UG
PESD3V3L4UW
PESD5V0L4UW
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PP
I
PP
peak pulse power
peak pulse current
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
I
FSM
non-repetitive peak forward square wave;
current
t
p
= 1 ms
t
p
= 8/20
µs
t
p
= 8/20
µs
[1][2][3]
[1][2][3]
Parameter
Conditions
Min
-
-
Max
30
3.0
Unit
W
A
-
2.5
A
-
3.5
A
PESDXL4UF_G_W_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 February 2008
3 of 17
NXP Semiconductors
PESDxL4UF/G/W
Low capacitance unidirectional quadruple ESD protection diode arrays
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
ZSM
Parameter
Conditions
Min
Max
Unit
non-repetitive peak reverse square wave;
current
t
p
= 1 ms
PESD3V3L4UF
PESD3V3L4UG
PESD3V3L4UW
PESD5V0L4UF
PESD5V0L4UG
PESD5V0L4UW
P
ZSM
Per device
T
j
T
amb
T
stg
[1]
[2]
[3]
-
0.9
A
-
0.8
A
non-repetitive peak reverse square wave;
power dissipation
t
p
= 1 ms
junction temperature
ambient temperature
storage temperature
-
6
W
-
−65
−65
150
+150
+150
°C
°C
°C
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
[3]
Device stressed with ten non-repetitive ESD pulses.
For PESDxL4UF measured from pin 1, 3, 4 or 6 to pin 2 or 5.
For PESDxL4UG and PESDxL4UW measured from pin 1, 3, 4 or 5 to pin 2.
[1][2][3]
Parameter
Conditions
Min
-
-
Max
20
10
Unit
kV
kV
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
PESDXL4UF_G_W_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 28 February 2008
4 of 17
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