Silicon Avalanche Diodes
1500 Watt Axial Leaded Transient Voltage Suppressors
ICTE/MPTE Series
The ICTE/MPTE series 1500 W transient suppressors are designed
specifically for protection of CMOS, NMOS, BiMOS, and other
integrated circuits available today for TTL, DTL, ECL, RTL, and
linear functions. This series offers the lowest clamping voltages.
®
6
SILICON DIODE
ARRAYS
Max 1.066
Min 25.4
4.826
5.207
9.146
9.527
Min 25.4
FEATURES
•
Stand-off voltage range 5 to 45 Volts
•
Uni-directional and Bi-directional
•
Glass passivated junction
•
Very low clamping voltages
•
100% surge tested
MAXIMUM RATING
•
Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs) @25°C
(see diagram on page 3 for wave form)
•
5 watt steady state
•
Response time: 1 x 10
-12
seconds (theoretical)
•
Forward surge rating 200 Amps, 8.3ms half sine wave, (uni-
directional devices only)
•
Operating & storage temperature: -55°C to +150°C
MECHANICAL CHARACTERISTICS
•
Case: DO-201AD: Molded plastic over glass
passivated junction
•
Terminals: Axial leads, solderable per MIL-STD-202
Method 208
•
Solderable leads = 230°C for 10 seconds (1.59mm from case)
•
Marking: cathode band, (positive terminal, uni-directional
devices only), device code, logo
•
Weight: 1.5 grammes (approx)
Agency Approvals:
Recognized under the Components
Program of Underwriters Laboratories.
Agency File Number:
E128662
All dimensions in mm
ORDERING INFORMATION
ICTE or MPTE
C
Voltage
Bi-Directional
Packaging Option
B = Bulk (500 pcs)
T = Tape and reeled (1500 pcs)
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307
Silicon Avalanche Diodes
1500 Watt Axial Leaded Transient Voltage Suppressors
ICTE/MPTE Series
100,000
Measured at
Zero Bias
10,000
Cj (pf)
1000
T
J
=2 5°C
f=1.0 MHz
Vsig=50mVp-p
100
1
2
5
10 20 50 100 200
Measured at
Stand-Off
Voltage (VR)
10
Pp
(kw)
1.0
®
100
0.1
1µs
1.0µs
10µs
100µs
1.0ms
10ms
Pulse width (tp)
V(BR)
-
Pulse Width (tp)
Breakdown Voltage - Volts
Figure 2 - Peak Pulse Power Rating Curve
Figure 1 - Typical Junction Capacitance
ELECTRICAL SPECIFICATION @ Tamb 25°C
Part
Number
Reverse
Standoff
Voltage
Vr
(Volts)
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
Minimum
Breakdown
Voltage
Vbr @1mA
(Volts)
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
Maximum
Reverse
Leakage
Ir
@ Vr
(µA)
300.0
25.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
50.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
Maximum
Clamping
Voltage
V
C
@
I
PP
1=1A
(Volts)
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
Maximum
Clamping
Voltage
V
C
@
I
PP
2=10A
(Volts)
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
Maximum
Peak Pulse
Current
I
PP
(A)
160.0
100.0
90.0
70.0
60.0
50.0
40.0
23.0
19.0
100.0
90.0
70.0
60.0
50.0
40.0
23.0
19.0
ICTE-5/MPTE-5*
ICTE-8/MPTE-8*
ICTE-10/MPTE-10
ICTE-12/MPTE-12
ICTE-15/MPTE-15
ICTE-18/MPTE-18*
ICTE-22/MPTE-22
ICTE-36/MPTE-36
ICTE-45/MPTE-45
ICTE-8C/MPTE-8C
ICTE-10C/MPTE-10C
ICTE-12C/MPTE-12C
ICTE-15C/MPTE-15C
ICTE-18C/MPTE-18C
ICTE-22C/MPTE-22C
ICTE-36C/MPTE-36C
ICTE-45C/MPTE-45C
ICTE-5 is not available in Bi-directional. Suffix ‘C’ denotes Bi-directional device. * Preferred voltages.
V
F
max = 3.5 Volts max at I
F
= 50A 300µS square wave pulse
308
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Embedded System
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