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CPDF3V3UP-HF

Description
ESD Suppressors / TVS Diodes VL:3.3V,IR:0.5uA
CategoryDiscrete semiconductor    diode   
File Size96KB,4 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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CPDF3V3UP-HF Overview

ESD Suppressors / TVS Diodes VL:3.3V,IR:0.5uA

CPDF3V3UP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PDSO-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum clamping voltage8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-N2
Maximum non-repetitive peak reverse power dissipation40 W
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
GuidelineIEC-61000-4-2
Maximum repetitive peak reverse voltage3.3 V
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
SMD ESD Protection Diode
CPDF3V3UP-HF
RoHS Device
Halogen Free
Features
- Working voltage: 3.3V
- Low leakage current.
- Low operating and clamping voltages.
0.051(1.30)
1005/SOD-323F
0.102(2.60)
0.095(2.40)
Mechanical data
- Case: 1005/SOD-323F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Marking code: E3V3
- Mounting position: Any
- Weight: 0.003 grams(approx.).
0.043(1.10)
0.035(0.90)
0.027(0.70)
0.024(0.60)
0.016(0.40)
0.014(0.35)
0.011(0.28)
Circuit Diagram
0.041(1.05)
0.037(0.95)
Dimensions in inches and (millimeter)
Maximum Rating
(at T
A
=25°C unless otherwise noted)
Parameter
Peak pulse power ( tp = 8/20 us)
Peak pulse current
( tp = 8/20 us)
Symbol
P
PP
I
PP
V
ESD
T
j
T
STG
Value
40
5
±20
±15
-55 to +125
-55 to +125
Unit
W
A
kV
°C
°C
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating temperature range
Storage temperature range
Electrical Characteristics
(at T
A
=25°C unless otherwise noted)
Parameter
Reverse stand-off voltage
Punch-through voltage
Snap-back voltage
Reverse leakage current
I
PT
= 2uA
I
SB
= 50mA
V
RWM
= 3.3V
I
PP
= 1 A, tp=8/20us
Clamping voltage
I
PP
= 5 A, tp=8/20us
Reverse clamping voltage
Junction capacitance
I
PPR
= 1 A, tp=8/20us
V
R
= 0 V, f = 1MHz
V
C
V
CR
C
j
12
8.0
2.4
16
V
V
pF
REV:B
Conditions
Symbol
V
RWM
V
PT
V
SB
I
R
V
C
Min
Typ
Max
3.3
Unit
V
V
V
3.5
2.8
0.05
0.5
5.5
uA
V
Company reserves the right to improve product design , functions and reliability without notice.
QW-G7043
Page 1
Comchip Technology CO., LTD.
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