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LCE80-E3-1

Description
ESD Suppressors / TVS Diodes 1.5KW 8.0V 10% Uni
CategoryCircuit protection   
File Size76KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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LCE80-E3-1 Overview

ESD Suppressors / TVS Diodes 1.5KW 8.0V 10% Uni

LCE80-E3-1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerVishay
Product CategoryESD Suppressors / TVS Diodes
RoHSDetails
PolarityUnidirectional
Termination StyleAxial
Breakdown Voltage8.89 V
Working Voltage8 V
Clamping Voltage15 V
Package / CaseDO-201AA
Pd - Power Dissipation1.5 kW
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 175 C
PackagingBulk
Operating Temperature Range- 65 C to + 175 C
Factory Pack Quantity1500
Unit Weight0.042329 oz
LCE6.5A thru LCE28A
www.vishay.com
Vishay General Semiconductor
Low Capacitance T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• 1500 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Case Style 1.5KE
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
1500 W
6.5 W
175 °C
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
T
J
max.
6.5 V to 28 V
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes TVS cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(1)
(fig. 1)
Peak power pulse surge current with a 10/1000 μs waveform
(1)
(fig. 2)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 2)
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig.
A
SYMBOL
P
PPM
I
PPM
P
D
T
J
, T
STG
LIMIT
1500
See next table
6.5
- 65 to + 175
UNIT
W
A
W
°C
Revision: 22-Nov-11
Document Number: 88357
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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