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824551701

Description
Trans Voltage Suppressor Diode, 3000W, Bidirectional, 1 Element, Silicon, DO-214AB,
CategoryDiscrete semiconductor    diode   
File Size280KB,7 Pages
ManufacturerWurth Elektronik
Environmental Compliance
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824551701 Overview

Trans Voltage Suppressor Diode, 3000W, Bidirectional, 1 Element, Silicon, DO-214AB,

824551701 Parametric

Parameter NameAttribute value
Brand NameWurth Electronik
Is it Rohs certified?conform to
Objectid8147060061
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
YTEOL15
Maximum breakdown voltage86 V
Minimum breakdown voltage77.81 V
Breakdown voltage nominal value81.9 V
Maximum clamping voltage113 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation6.5 W
GuidelineUL APPROVED
Maximum reverse current2 µA
Reverse test voltage70 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Dimensions: [mm]
Recommended Land Pattern: [mm]
Electrical Properties:
Properties
DC Operating Voltage
(Reverse) Breakdown Voltage
Test conditions
V
DC
1 mA
I
PEAK
10/1000 µs
V
DC
T
A
= 50 °C
10/1000 µs
Bidirectional
on 5.0 mm x 5.0 mm (0.03 mm thick) Copper Pads to each terminal
V
BR
V
Clamp
I
Peak
I
LEAK
P
DISS
P
DISS
Value
70
81.9
113
26.5
2
6.5
3000
Unit
V
V
V
A
µA
W
W
Tol.
max.
±5%
max.
max.
max.
max.
max.
9,30
4,70
2,30
Clamping Voltage
(Reverse) Peak Pulse Current
Leakage Current
3,30
3,05 ±0,15
Steady State Power Dissipation
Power Dissipation
1)
Polarity
1)
Mounted
1,14 ±0,38
7,94 ±0,19
6,86 ±0,25
Scale - 4:1
Schematic:
2,34 ±0,28
2,5 ±0,3
General Information:
It is recommeded that the temperature of the component does not exceed +150°C under worst
case conditions
Operating Temperature
-65 °C up to +150 °C
-40 °C up to +60 °C
5,9 ± 0,32
Storage Temperature (in original
packaging)
Test conditions of Electrical Properties: +20°C, 33% RH if not specified differently
Scale - 4:1
Product Marking:
Marking
DGP
Würth Elektronik eiSos GmbH & Co. KG
EMC & Inductive Solutions
Max-Eyth-Str. 1
74638 Waldenburg
Germany
Tel. +49 (0) 79 42 945 - 0
www.we-online.com
eiSos@we-online.com
SIZE
REVISION
STATUS
CREATED
CHECKED
GENERAL TOLERANCE
PROJECTION
METHOD
KaS
DESCRIPTION
RoD
DIN ISO 2768-1m
WE-TVSP Power TVS Diode
ORDER CODE
824551701
DATE
BUSINESS UNIT
PAGE
DO-214AB
001.000
Draft
2015-11-10
eiSos
1/7
This electronic component has been designed and developed for usage in general electronic equipment only. This product is not authorized for use in equipment where a higher safety standard and reliability standard is especially required or where a failure of the product is reasonably expected to cause severe personal injury or death, unless the parties have executed an agreement specifically governing such use. Moreover Würth Elektronik eiSos GmbH
& Co KG products are neither designed nor intended for use in areas such as military, aerospace, aviation, nuclear control, submarine, transportation (automotive control, train control, ship control), transportation signal, disaster prevention, medical, public information network etc.. Würth Elektronik eiSos GmbH & Co KG must be informed about the intent of such usage before the design-in stage. In addition, sufficient reliability evaluation checks for safety
must be performed on every electronic component which is used in electrical circuits that require high safety and reliability functions or performance.

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