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IP4302CX2/A
Low profile bidirectional low capacitance ESD protection
diode
Rev. 1 — 28 November 2011
Product data sheet
1. Product profile
1.1 General description
The IP4302CX2/A is a bidirectional diode which is designed to provide protection to
downstream components from ElectroStatic Discharge (ESD) voltages as high as
15
kV
contact discharge according to the IEC 61000-4-2 model, far exceeding standard level 4.
The device is fabricated using monolithic silicon technology and integrates one pair of
back-to-back diodes in a 0.4 mm pitch Wafer-Level Chip-Scale Package (WLCSP).
These features make the IP4302CX2/A ideal for use in applications requiring the utmost
in miniaturization such as mobile phone handsets, cordless telephones and other portable
electronic devices.
1.2 Features and benefits
Pb-free, RoHS compliant and free of halogen and antimony (Dark Green compliant)
Bidirectional ESD protection of one line
Integrated ESD protection withstanding
15
kV contact discharge, far exceeding
IEC 61000-4-2 level 4
Ultra low height of 0.40 mm only
0.52 mm
0.7 mm size package
1.3 Applications
Cellular handsets and accessories
Portable electronics
Subscriber Identity Module (SIM) card protection
Communication systems
Computers and peripherals
NXP Semiconductors
IP4302CX2/A
Low profile bidirectional ESD protection diode
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
C; unless otherwise specified.
Symbol
V
BR
C
d
V
ESD
[1]
[2]
Parameter
breakdown voltage
diode capacitance
electrostatic discharge
voltage
Conditions
I
R
= 1 mA
I
R
=
1
mA
f = 1 MHz; V
R
= 0 V
contact discharge
[1][2]
Min
14.0
-
-
15
Typ
16.5
16.5
-
-
Max
-
14.0
10
+15
Unit
V
V
pF
kV
Device is qualified with 1000 pulses of
15
kV contact discharges each, according to the IEC 61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
A special robust test is performed stressing the devices with
1000 contact discharges according to the
IEC 61000-4-2 model and far exceeds the specified level 4 (8 kV contact discharge).
2. Pinning information
Table 2.
Pin
1
2
Pinning
Simplified outline
[1]
Description
cathode (diode 1)
cathode (diode 2)
Graphic symbol
1
2
006aab041
A1
(1)
A1
(2)
001aao233
[1]
The device is electrically and mechanically symmetrical. Thus no marking is needed.
3. Ordering information
Table 3.
Ordering information
Name
Description
Version
IP4302CX2/A
Type number Package
IP4302CX2/A WLCSP2 wafer level chip-size package; 2 bumps (A1-A1)
IP4302CX2_A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 November 2011
2 of 10
NXP Semiconductors
IP4302CX2/A
Low profile bidirectional ESD protection diode
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
ESD
electrostatic
discharge voltage
Conditions
contact discharge
air discharge
IEC 61000-4-2 level 4
contact discharge
air discharge
MIL-STD-883D (method 3015) HBM
T
j
T
amb
T
stg
[1]
[2]
[1][2]
Min
15
15
8
15
4
-
35
65
Max
+15
+15
+8
+15
+4
150
+85
+150
Unit
kV
kV
kV
kV
kV
C
C
C
junction temperature
ambient temperature
storage temperature
Device is qualified with 1000 pulses of
15
kV contact discharges each, according to the IEC 61000-4-2
model and far exceeds the specified level 4 (8 kV contact discharge).
A special robust test is performed stressing the devices with
1000 contact discharges according to the
IEC 61000-4-2 model and far exceeds the specified level 4 (8 kV contact discharge).
5. Characteristics
Table 5.
Characteristics
T
amb
= 25
C; unless otherwise specified.
Symbol Parameter
I
LR
V
BR
C
d
reverse leakage current
breakdown voltage
diode capacitance
Conditions
V
RWM
= 5 V
V
RWM
=
5
V
I
R
= 1 mA
I
R
=
1
mA
f = 1 MHz; V
R
= 0 V
Min
-
20
14.0
-
-
Typ
-
-
16.5
-
Max
20
-
-
10
Unit
nA
nA
V
pF
16.5 14.0
V
IP4302CX2_A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 November 2011
3 of 10
NXP Semiconductors
IP4302CX2/A
Low profile bidirectional ESD protection diode
I
PP
−V
CL
−V
BR
−V
RWM
I
R
I
LR
−I
LR
−I
R
V
RWM
V
BR
V
CL
−
+
−I
PP
008aaa270
Fig 1.
V-I characteristics for a bidirectional ESD protection diode
6. Application information
The IP4302CX2/A is designed for the protection of one bidirectional data or signal line
from the damage caused by ESD. The device may be used on lines where the signal
polarities are both, positive and negative with respect to ground.
line to be protected
DUT
GND
008aaa272
Fig 2.
Application diagram of IP4302CX2/A
6.1 Printed-Circuit Board (PCB) layout and protection device placement
PCB layout is critical for the suppression of ESD and Electric Fast Transient (EFT).
The following guidelines are recommended:
1. Place the device as close as possible to the input terminal or connector
2. The path length between the device and the protected line should be minimized
3. Keep parallel signal paths to a minimum
4. Avoid running protected conductors in parallel with unprotected conductors
5. Minimize all PCB conductive loops including power and ground loops
6. Minimize the length of the transient return path to ground
7. Avoid using shared transient return paths to a common ground point
IP4302CX2_A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 28 November 2011
4 of 10
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