SMP100MC
Trisil™ for telecom equipment protection
Features
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Bidirectional crowbar protection
Voltage: range from 140 V to 400 V
Low V
BO
/ V
R
ratio
Micro capacitance from 15 pF to 30 pF @ 50 V
Low leakage current: I
R
= 2 µA max
Holding current: I
H
= 150 mA min.
Repetitive peak pulse current:
I
PP
= 100 A (10/1000 µs)
SMB
(JEDEC DO-214AA)
Benefits
■
Trisils are not subject to ageing and provide a
fail safe mode in short circuit for better
protection.
Helps equipment meet main standards such as
UL60950, IEC 950 / CSA C22.2 and UL1459.
Epoxy meets UL94, V0.
Package is JEDEC registered (DO-214AA).
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Description
The SMP100MC is a series of micro capacitance
transient surge arrestors designed for the
protection of high debit rate communication
equipment. Its micro capacitance avoids any
distortion of the signal and is compatible with
digital transmission line cards (ADSL, VDSL,
ISDN...).
SMP100MC series has been tested and
confirmed compatible with Cooper Bussmann
Telecom Circuit Protector TCP 1.25 A.
Complies with the following standards
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GR-1089 Core
ITU-T-K20/K21
IEC 61000-4-5
TIA/EIA IS-968
UL497B recognized, UL file E136224
Applications
Any sensitive equipment requiring protection
against lightning strikes and power crossing:
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Terminals (phone, fax, modem...) and central
office equipment
ADSL2+ and low end VDSL
TM:
Trisil is a trademark of STMicroelectronics.
February 2012
Doc ID 9699 Rev 5
1/13
www.st.com
13
SMP100MC
Table 2.
Symbol
Characteristics
Absolute ratings (T
amb
= 25 °C)
Parameter
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
8/20 µs
t = 0.2 s
t=1s
t=2s
t = 15 mn
t = 16.6 ms
t = 20 ms
Value
100
300
140
150
200
300
500
5
18
9
7
4
20
21
-55 to 150
-40 to 150
260
Units
I
PP
Repetitive peak pulse current
A
I
FS
Fail-safe mode: maximum current
(1)
kA
I
TSM
Non repetitive surge peak on-state current
(sinusoidal)
A
I
2
t
T
stg
T
j
T
L
I
2
t value for fusing
Storage temperature range
Operating junction temperature range
A²s
°C
°C
°C
Maximum lead temperature for soldering during 10 s.
1. In fail safe mode the device acts as a short circuit.
Table 3.
Symbol
R
th(j-a)
R
th(j-l)
Thermal resistances
Parameter
Junction to ambient (with recommended footprint)
Junction to leads
Value
100
20
Unit
°C/W
°C/W
Figure 1.
Electrical characteristics - definitions (T
amb
= 25 °C)
Symbol
V
RM
V
BO
I
RM
I
PP
I
BO
I
H
V
R
I
R
C
Parameter
Stand-off voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
Continuous reverse voltage
Leakage current at V
R
Capacitance
I
PP
I
I
BO
I
H
I
RM
V
V
RM
V
R
V
BO
Doc ID 9699 Rev 5
3/13
Characteristics
Table 4.
Electrical characteristics - values (T
amb
= 25 °C)
I
RM
@ V
RM
Types
max.
µA
SMP100MC-140
SMP100MC-160
SMP100MC-200
SMP100MC-230
2
SMP100MC-270
SMP100MC-320
SMP100MC-360
SMP100MC-400
243
290
325
360
V
126
144
180
207
5
270
320
360
400
345
400
460
540
335
390
450
530
I
R
@ V
R
max.
µA
V
140
160
200
230
Dynamic
Static
V
BO (1)
V
BO
@ I
BO(2)
max.
V
180
205
255
295
max.
V
175
200
250
285
800
150
max.
mA
I
H(3)
min.
mA
SMP100MC
C
(4)
typ.
pF
30
25
20
20
20
15
15
15
C
(5)
typ.
pF
60
50
45
40
40
35
35
30
1. See
Figure 16: Test circuit 1 for Dynamic IBO and VBO parameters
2. See
Figure 17: Test circuit 2 for IBO and VBO parameters
3. See
Figure 18: Test circuit 3 for dynamic IH parameter
4. V
R
= 50 V bias, V
RMS
=1V, F=1 MHz
5. V
R
= 2 V bias, V
RMS
=1V, F=1 MHz
4/13
Doc ID 9699 Rev 5
SMP100MC
Characteristics
Figure 2.
Pulse waveform
Repetitive peak pulse current
tr = rise time (µs)
Figure 3.
I
TSM
(A)
70
Non repetitive surge peak on-state
current versus overload duration
%I
PP
100
tp = pulse duration time (µs)
F=50Hz
Tj initial = 25°C
60
50
40
50
30
20
10
0
t
r
Figure 4.
t
p
t
0
1.E-02
1.E-01
1.E+00
t(s)
1.E+01
1.E+02
1.E+03
On-state voltage versus on-state
current (typical values)
Figure 5.
Relative variation of holding
current versus junction
temperature
I
T
(A)
100
Tj=25°C
I
H
[Tj] / I
H
[Tj=25°C]
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
T
(V)
10
0
1
2
3
4
5
6
7
8
0.2
0.0
-40 -30 -20 -10
0
10
20
30
Tj(°C)
40
50
60
70
80
90 100 110 120 130
Figure 6.
Relative variation of breakover
voltage versus junction
temperature
Figure 7.
Relative variation of leakage
current versus reverse voltage
applied (typical values)
V
BO
[Tj] / V
BO
[Tj=25°C]
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90 100 110 120 130
1.E+01
1.E+02
1.E+03
I
R
[Tj] / I
R
[Tj=25°C]
V
R
=243V
Tj(°C)
1.E+00
25
50
Tj(°C)
75
100
125
Doc ID 9699 Rev 5
5/13
Microcontroller MCU
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