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S40410161B1B2W010

Description
Flash Memory 100 BGA, -25 TO 85C, 1.8V/3.3V VCC, V4.51, SPANSION EMMC NAND FLASH MEMORY
Categorystorage    storage   
ManufacturerCypress Semiconductor
Environmental Compliance
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S40410161B1B2W010 Overview

Flash Memory 100 BGA, -25 TO 85C, 1.8V/3.3V VCC, V4.51, SPANSION EMMC NAND FLASH MEMORY

S40410161B1B2W010 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instructionLBGA,
Reach Compliance Codecompliant
Spare memory width4
JESD-30 codeR-PBGA-B100
length18 mm
memory density137438953472 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals100
word count17179869184 words
character code16000000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize16GX8
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Programming voltage3 V
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
typeMLC NAND TYPE
width14 mm
Base Number Matches1

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Index Files: 1734  196  2651  2008  2581  35  4  54  41  52 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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