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JANTX1N4458R

Description
15 A, SILICON, RECTIFIER DIODE, DO-4
CategoryDiscrete semiconductor    diode   
File Size119KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTX1N4458R Overview

15 A, SILICON, RECTIFIER DIODE, DO-4

JANTX1N4458R Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeDO-4
package instructionO-MUPM-D1
Contacts1
Reach Compliance Codecompliant
Is SamacsysN
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current15 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusQualified
GuidelineMIL-19500/162
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Glass Passivated Die
VRRM 200 to 1000 Volts
Qualified per MIL-PRF-19500/162
Glass to Metal Seal Construction
DEVICES
LEVELS
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
JAN
JANTX
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
Symbol
Value
200
400
600
800
1000
15
100
4.5
-65°C to 175°C
-65°C to 175°C
Unit
V
RWM
V
Average Forward Current, T
C
= 150°
Peak Surge Forward Current @ t
p
= 8.3ms, half sinewave,
T
C
= 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
I
F
I
FSM
R
θJC
T
j
T
STG
A
A
°C/W
°C
°C
DO-203AA (DO-4)
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I
FM
= 15A, T
C
= 25°C*
Reverse Current
V
RM
= 200, T
C
= 25°C
V
RM
= 400, T
C
= 25°C
V
RM
= 600, T
C
= 25°C
V
RM
= 800, T
C
= 25°C
V
RM
= 1000, T
C
= 25°C
Reverse Current
V
RM
= 200, T
C
= 150°C
V
RM
= 400, T
C
= 150°C
V
RM
= 600, T
C
= 150°C
V
RM
= 800, T
C
= 150°C
V
RM
= 1000, T
C
= 150°C
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
1N1614
1N1615
1N1616
1N4458
1N4459
1N1614R
1N1615R
1N1616R
1N4458R
1N4459R
Symbol
V
FM
Min.
Max.
1.5
Unit
V
I
RM
50
μA
I
RM
500
μA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
T4-LDS-0139 Rev. 1 (091749)
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