Freescale Semiconductor
Technical Data
Document Number: MRF6S9045
Rev. 1, 6/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
•
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 350 mA, P
out
= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc @ 30 kHz Bandwidth
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 350 mA,
P
out
= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
•
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 350 mA, P
out
= 45 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
•
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Integrated ESD Protection
•
N Suffix Indicates Lead - Free Terminations
•
200°C Capable Plastic Package
•
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
•
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6S9045NR1
MRF6S9045NBR1
MRF6S9045MR1
MRF6S9045MBR1
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6S9045NR1(MR1)
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6S9045NBR1(MBR1)
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, + 12
175
1.0
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 45 W CW
Case Temperature 79°C, 10 W CW
Symbol
R
θJC
Value
(1,2)
1.0
1.1
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µA)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 350 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.0 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
77
27
0.78
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
1
2
—
—
2
2.9
0.22
4
3
4
0.3
—
Vdc
Vdc
Vdc
S
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 350 mA, P
out
= 10 W Avg., f = 880 MHz, Single - Carrier
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750
kHz Offset. PAR = 9.8 dB
@ 0.01% Probability on CCDF
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
MRF6S9045NR1(MR1)
MRF6S9045NBR1(MBR1)
G
ps
η
D
ACPR
IRL
21
30.5
—
—
- 20
- 20
-9
-7
22.7
32
- 47
25
—
- 45
dB
%
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM EDGE Performances
(In Freescale GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50
οhm
system)
V
DD
= 28 Vdc, I
DQ
= 350 mA, P
out
= 16 W Avg., f = 921 - 960 MHz, GSM EDGE Signal
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
G
ps
η
D
EVM
SR1
SR2
—
—
—
—
—
20
46
1.5
- 62
- 78
—
—
—
—
—
dB
%
%
dBc
dBc
Typical CW Performances
(In Freescale GSM Test Fixture Optimized for 921 - 960 MHz, 50
οhm
system) V
DD
= 28 Vdc,
I
DQ
= 350 mA, P
out
= 45 W, f = 921 - 960 MHz
Power Gain
Drain Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point
(f = 940 MHz)
G
ps
η
D
IRL
P1dB
—
—
—
—
20
68
- 12
52
—
—
—
—
dB
%
dB
W
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
3
B1
R1
V
BIAS
+
C15
RF
INPUT
R2
L2
R3
C7
L1
Z10
C5
Z1
C1
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.215″
0.221″
0.500″
0.460″
0.040″
0.280″
0.087″
0.435″
0.057″
x 0.065″
x 0.065″
x 0.100″
x 0.270″
x 0.270″
x 0.270″
x 0.525″
x 0.525″
x 0.525″
C3
C4
C6
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C9
DUT
C8
Z11
Z12
B2
+
C10
C16
+
C17
+
V
SUPPLY
C18
RF
OUTPUT
Z16
C14
Z13
Z14
Z15
C11
C12
C13
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.530″ Taper
Microstrip
Microstrip
Microstrip
0.360″ x 0.270″ Microstrip
0.063″ x 0.270″ Microstrip
0.360″ x 0.065″ Microstrip
0.095″ x 0.065″ Microstrip
0.800″ x 0.065″ Microstrip
0.260″ x 0.065″ Microstrip
0.325″ x 0.065″ Microstrip
Taconic RF - 35 0.030″,
ε
r
= 3.5
Figure 1. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Schematic
Table 6. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Designations and Values
Part
B1
B2
C1, C7, C10, C14
C2, C4, C12
C3
C5, C6
C8, C9
C11
C13
C15, C16, C17
C18
L1, L2
R1
R2
R3
Ferrite Bead
Ferrite Bead
47 pF Chip Capacitors
0.8 - 8.0 pF Variable Capacitors, Gigatrim
15 pF Chip Capacitor
12 pF Chip Capacitors
13 pF Chip Capacitors
7.5 pF Chip Capacitor
0.6 - 4.5 pF Variable Capacitor, Gigatrim
10
µF,
35 V Tantalum Capacitors
220
µF,
50 V Electrolytic Capacitor
12.5 nH Inductor
1 kΩ Chip Resistor
560 kΩ Chip Resistor
12
Ω
Chip Resistor
Description
Part Number
2743019447
2743021447
100B470JP500X
27291SL
100B150JP500X
100B120JP500X
100B130JP500X
100B7R5JP500X
27271SL
T491D106K035AS
678D227M025CG3D
A04T - 5
CRCW12061001F100
CRCW12065603F100
CRC120612R0F100
Manufacturer
Fair Rite
Fair Rite
ATC
Johanson
ATC
ATC
ATC
ATC
Johanson
Kemet
Vishay
Coilcraft
Vishay Dale
Vishay Dale
Vishay Dale
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
4
RF Device Data
Freescale Semiconductor
C15
R2
R3
R1
C18
V
DD
C16 C17
B2
C7
C5
C8
C3
C6
CUT OUT AREA
C4
C10
L2
V
GG
B1
L1
C1
C2
C14
C9
C11
C12
C13
TO−270/272
Surface /
Bolt down
Figure 2. MRF6S9045NR1(MR1)/NBR1(MBR1) Test Circuit Component Layout
MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1
RF Device Data
Freescale Semiconductor
5
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