TYPICAL PERFORMANCE CURVES
APT15GP90B
APT15GP90B
900V
POWER MOS 7 IGBT
®
TO-247
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol
V
CES
V
GE
V
GEM
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
• 100 kHz operation @ 600V, 9A
• 50 kHz operation @ 600V, 17A
• SSOA Rated
E
C
G
E
All Ratings: T
C
= 25°C unless otherwise specified.
APT15GP90B
UNIT
900
±20
±30
43
21
60
60A @ 900V
291
-55 to 150
300
Watts
°C
Amps
Volts
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 150°C
Switching Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 250µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
900
3
4.5
3.2
2.7
250
2
6
3.9
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 15A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V)
2
Volts
I
CES
I
GES
µA
nA
8-2004
050-7470
Rev C
2500
±100
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
SSOA
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
Symbol
R
ΘJC
R
ΘJC
W
T
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
1
APT15GP90B
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CE
= 450V
I
C
= 15A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
15V, L = 100µH,V
CE
= 900V
Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 15A
4
5
MIN
TYP
MAX
UNIT
pF
V
nC
A
1100
120
32
7.5
60
10
27
60
9
14
33
55
TBD
430
200
9
14
70
100
TBD
790
500
MIN
TYP
MAX
UNIT
°C/W
gm
ns
ns
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
44
55
R
G
= 5Ω
T
J
= +25°C
Turn-on Switching Energy (Diode)
6
µ
J
Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 15A
R
G
= 5Ω
T
J
= +125°C
Turn-on Switching Energy (Diode)
66
µ
J
THERMAL AND MECHANICAL CHARACTERISTICS
.50
N/A
5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7470
Rev C
8-2004
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
10
0
T
C
=25°C
T
C
=125°C
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
50
APT15GP90B
VGE = 10V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
40
30
T
C
=125°C
20
T
C
=25°C
10
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
I
C
= 15A
T
J
= 25°C
FIGURE 1, Output Characteristics(V
GE
= 15V)
100
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (V
GE
= 10V)
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
GATE CHARGE (nC)
FIGURE 4, Gate Charge
60
70
I
C
, COLLECTOR CURRENT (A)
80
V
CE
= 180V
V
CE
= 450V
60
40
TJ = -55°C
TJ = 25°C
TJ = 125°C
0
2
4
6
8
10
12
14
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
= 720V
20
0
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5
4
I
C
= 15A
3
2
1
0
I
C
= 7.5A
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
4
3.5
3
2.5
2
1.5
1
0.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
C
=30A
I
C
= 15A
I
C
= 7.5A
I
C
=30A
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.2
6
0
25
50
75
100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
0
-50
0
-50
-25
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
1.10
1.05
1.0
0.95
0.9
0.85
0.8
-50
I
C,
DC COLLECTOR CURRENT(A)
1.15
050-7470
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
-25
Rev C
8-2004
14
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
t
d(ON)
, TURN-ON DELAY TIME (ns)
80
70
60
50
40
30
20
10
0
V
CE
=
600V
R
G
=
5Ω
L = 100 µH
V
GE
=15V,T
J
=25°C
V
GE
=15V,T
J
=125°C
APT15GP90B
12
10
8
6
4
2
0
V
CE
= 600V
T
J
= 25°C
,
T
J
=125°C
R
G
= 5Ω
L = 100 µH
V
GE
= 15V
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
35
30
25
20
15
10
5
0
T
J
=
25 or 125°C,V
GE
=
15V
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
600V
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
100
T
J
=
125°C, V
GE
=
15V
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
600V
t
r,
RISE TIME (ns)
t
f,
FALL TIME (ns)
80
60
40
20
0
T
J
=
25°C, V
GE
=
15V
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
2000
E
ON2
, TURN ON ENERGY LOSS (µJ)
V
CE
= 600V
V
GE
= +15V
R
G
= 5
Ω
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1200
E
OFF
, TURN OFF ENERGY LOSS (µJ)
V
CE
= 600V
V
GE
= +15V
R
G
= 5
Ω
1000
800
600
400
200
0
1500
T
=
125°C,V
GE
=
15V
J
T
J
=
125°C, V
GE
=
15V
1000
500
T
=
25°C,V
GE
=
15V
J
T
J
=
25°C, V
GE
=
15V
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
2500
SWITCHING ENERGY LOSSES (µJ)
V
CE
= 600V
V
GE
= +15V
T
J
= 125°C
0
5
10
15
20
25
30
35
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
2000
SWITCHING ENERGY LOSSES (µJ)
V
CE
= 600V
V
GE
= +15V
R
G
= 5
Ω
E
on2,
30A
2000
1500
E
on2,
30A
1000
E
on2,
15A
500
E
on2,
9A
0
E
off,
15A
E
off,
30A
1500
E
off,
30A
1000
E
on2,
15A
E
on2,
9A
500
E
off,
9A
0
E
off,
15A
Rev C
8-2004
050-7470
10
20
30
40
50
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
E
off,
9A
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000
Cies
I
C
, COLLECTOR CURRENT (A)
70
60
50
40
30
20
10
APT15GP90B
1,000
C, CAPACITANCE ( F)
P
500
100
50
Coes
Cres
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0
200
400
600
800
1000
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimum Switching Safe Operating Area
0
0
0.60
0.50
0.40
0.30
0.20
0.10
0
10
-5
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.9
0.7
0.5
0.3
0.1
0.05
10
-4
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
210
F
MAX
, OPERATING FREQUENCY (kHz)
RC MODEL
Junction
temp (°C)
0.222
Power
(watts)
0.278
Case temperature(°C)
0.125F
0.00474F
100
50
F
max
=
min(f
max1
, f
max 2
)
f
max1
=
T
J
= 125
°
C
T
C
= 75
°
C
D = 50 %
V
CE
= 600V
R
G
= 5
Ω
t
d (on )
0.05
+
t
r
+
t
d(off )
+
t
f
f
max 2
=
P
diss
=
10
P
diss
−
P
cond
E
on 2
+
E
off
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
20
30
40
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5
T
J
−
T
C
R
θ
JC
0
050-7470
Rev C
8-2004
Microcontroller MCU
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