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KST17L99Z

Description
RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size28KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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KST17L99Z Overview

RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

KST17L99Z Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Collector-based maximum capacity0.9 pF
Collector-emitter maximum voltage15 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)800 MHz
Base Number Matches1
KST17
KST17
CATV Transistor
2
1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
P
C
T
J
T
STG
R
TH
(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation (T
a
=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance junction to Ambient
Parameter
Value
20
15
3.0
6.25
5.0
150
-55 ~ 150
200
Units
V
V
V
mA
mA/°C
mW
°C
°C/W
Refer to KSP17 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
h
fe
NF
G
PE
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Small Signal Current Gain
Noise Figure
Power Gain
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=15V, I
E
=0
V
CE
=10V, I
C
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V, I
C
=5mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=5mA,
f=1MHz
V
CC
=12V, I
C
=5mA
R
S
=50Ω, f=200MHz
V
CC
=12V, I
C
=5mA
R
S
=50Ω, f=200MHz
24
800
0.3
30
6.0
dB
dB
0.9
25
Min.
20
15
3.0
100
250
0.5
V
MHz
pF
Typ.
Max.
Units
V
V
V
nA
©2000 Fairchild Semiconductor International
Rev. A, February 2000

KST17L99Z Related Products

KST17L99Z KST17D87Z KST17S62Z
Description RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknown unknown
ECCN code EAR99 EAR99 EAR99
Collector-based maximum capacity 0.9 pF 0.9 pF 0.9 pF
Collector-emitter maximum voltage 15 V 15 V 15 V
Configuration SINGLE SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 800 MHz 800 MHz 800 MHz
Base Number Matches 1 1 1

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