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JANKCF1N5807

Description
6 A, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size46KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

JANKCF1N5807 Overview

6 A, SILICON, RECTIFIER DIODE

JANKCF1N5807 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDIE
package instructionS-XUUC-N1
Contacts1
Reach Compliance Codecompliant
applicationFAST RECOVERY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.875 V
JESD-30 codeS-XUUC-N1
JESD-609 codee0
Number of components1
Phase1
Number of terminals1
Maximum operating temperature175 °C
Maximum output current6 A
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
GuidelineMIL-19500/477
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.03 µs
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
1N5807
1N5809
1N5811
JANHCE and JANKCE
JANHCF and JANKCF
FEATURES:
Chip Outline Dimensions: 68 x 68 mils
Chip Thickness: 8 to 12 mils
Anode Metallization: Aluminum
Metallization Thickness: 70,000Ã Nominal
Ã
Bonding Area: 42 x 42 mils Min.
Back Metallization: Gold-3000Ã Nominal
Ã
Junction Passivated with Thermal Silicon Dioxide - Planar Design
Backside Available with Solderable Ag Backside as JANHCF or
JANKCF
6 AMPS
FAST RECOVERY
RECTIFIER CHIP
50 - 150 VOLTS
Chip Type: RA
TYPE
JANHCE1N5807
JANHCE1N5809
JANHCE1N58011
JANKCE1N5807
JANKCE1N5809
JANKCE1N58011
V
R
50V
100V
150V
50V
100V
150V
V
BR
60V
110V
160V
60V
110V
160V
I
O
Tj = 75
°
C
6.0A
6.0A
6.0A
6.0A
6.0A
6.0A
A
ELECTRICAL CHARACTERISTICS:
CHARACTERISTIC
Reverse Current
Rated V
R
, T
C
= 25
°
C
Reverse Current
Rated V
R
, T
C
= 100
°
C
Forward Voltage Drop I
F
=
4A, T
C
= 25
°
C
Junction Capacitance @ V
R
= 10V
SYMBOL
I
R
I
R
V
F
Cj
TYPICAL
.01
1.0
.84
45
MAX.
5
150
.875
60
UNITS
µ
A
µ
A
Volts
Pf
REVERSE RECOVERY CHARACTERISTICS:
CHARACTERISTIC
Reverse Recovery Time
I
F
= 1A, I
R
= 1A, I
RR
= 0.1A
Forward Recovery Voltage @ 1A Tr = 8ns
Forward Recovery Time
I
FM
= 500 mA
SYMBOL
Trr
Vrr
TYPICAL
2.5
1.5
MAX.
30
2.2
15
UNITS
ns
V
ns
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