JANHCD1N5552 datasheet, PDF - EEWORLD Datasheet

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JANHCD1N5552: Description3 A, 200 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size198KB，28 Pages; ManufacturerETC

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3 A, 200 V, SILICON, RECTIFIER DIODE

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The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 19 July 2004.

INCH-POUND

MIL-PRF-19500/420H

19 April 2004

SUPERSEDING

MIL-PRF-19500/420G

30 December 2002

PERFORMANCE SPECIFICATION SHEET

* SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER, RECTIFIER,

TYPES 1N5550 THROUGH 1N5554, 1N5550US THROUGH 1N5554US,

JAN, JANTX, JANTXV, JANS, JANHCA, JANHCB, JANHCC, JANHCD,

JANHCE, JANKCA, JANKCD, AND JANKCE

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

* 1.1 Scope. This specification covers the performance requirements for silicon, general purpose, semiconductor

diodes. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (similar to DO-41) for 1N5550 through 1N5554, figure 2 for 1N5550US

through 1N5554US, and figures 3, 4, 5, 6, and 7 for JANHC and JANKC die.

1.3 Maximum ratings. Unless otherwise specified, T

= +25°C and ratings apply to all case outlines.

Col. 1

Type

Col. 2

(BR)

Col. 3

RWM

and

(BR)min

Col. 4

= +55°C;

L = .375 inch

(1) (2) (3)

A dc

Col. 5

FSM

= 2 A dc

= 1/120 s

= +55°C

A(pk)

100

Col. 6

Col. 7

+55°C

(2) (4)

A dc

Col. 8

STG

The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

V dc

1N5550, 1N5550US

1N5551, 1N5551US

1N5552, 1N5552US

1N5553, 1N5553US

1N5554, 1N5554US

200

400

600

800

1,000

200

400

600

800

1,000

°C

-65 to +200

°C

-65 to +175

(1) Derate linearly at 41.6 mA/°C above T

= +55°C at L = .375 inch (9.53 mm).

(2) An I

of up to 6 A dc is allowable provided that appropriate heat sinking or forced air cooling maintains the

maximum junction temperature at or below +200°C as proven by the junction temperature rise test (see 6.5).

Barometric pressure reduced:

1N5550, 1N5551, 1N5552 - 8 mmHg (100,000 feet).

1N5553, 1N5554

- 33 mmHg (70,000 feet).

(3) Does not apply to surface mount devices.

(4) Derate linearly at 25 mA/°C above T

= +55°C.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,

Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to

Semiconduction@dscc.dla.mil

. Since contact information can change, you may want to verify the currency of

this address information using the ASSIST Online database at

http://www.dodssp.daps.mil.

AMSC N/A

FSC 5961

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