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TPM2626-14

Description
MICROWAVE SEMICONDUCTOR
CategoryDiscrete semiconductor    The transistor   
File Size167KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TPM2626-14 Overview

MICROWAVE SEMICONDUCTOR

TPM2626-14 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)13 A
FET technologyJUNCTION
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsGALLIUM ARSENIDE
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