numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
4A
di
/
dt
≤
700A/µs
VR
≤
VDSS TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
1.0
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.80
0.9
0.7
0.60
0.5
0.40
0.3
0.20
0.1
0.05
0
10
-5
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
-4
1.0
SINGLE PULSE
Note:
PDM
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θJC
+ TC
050-7118 Rev A
1-2004
Typical Performance Curves
10
VGS =15 & 10V
I
D
, DRAIN CURRENT (AMPERES)
APT1003RKLL
7.5V
7V
6.5V
8
RC MODEL
Junction
temp. (°C)
0.386
Power
(watts)
0.508
Case temperature. (°C)
0.0903F
0.00336F
6
6V
4
5.5V
2
5V
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
16
I
D
, DRAIN CURRENT (AMPERES)
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.40
NORMALIZED TO
V
= 10V @ 2A
GS
14
12
10
8
6
4
2
1.30
VGS=10V
1.20
TJ = -55°C
1.10
VGS=20V
TJ = +25°C
1.00
0.90
0.80
TJ = +125°C
0
0
1
2
3
4
5
6
7
8
9
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
2 3
4 5 6
7
8 9 10
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
1
4
3.5
I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
I
V
D
1.15
1.10
1.05
3
2.5
2
1.5
1
0.5
0
25
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
= 2A
= 10V
GS
2.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.1
1.0
1.5
0.9
1.0
0.5
0.7
0.6
-50
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25
50
75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7118 Rev A
1-2004
0.8
APT1003RKLL
16
10
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
4,000
5
100µS
C, CAPACITANCE (pF)
1,000
Ciss
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
1000
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
100
Coss
1mS
10mS
Crss
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
10
.1
= 4A
12
VDS= 200V
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
TJ =+150°C
TJ =+25°C
8
VDS= 500V
VDS= 800V
10
4
10 15 20 25 30 35 40 45 50
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
25
t
d(off)
20
t
d(on)
and t
d(off)
(ns)
0
0
5
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
60
50
V
DD
G
1
= 667V
R
= 5Ω
T = 125°C
J
L = 100µH
V
DD
G
= 667V
15
R
= 5Ω
t
r
and t
f
(ns)
T = 125°C
J
40
30
20
t
f
L = 100µH
10
5
t
d(on)
0
0
4
5
6
7
8
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
G
10
0
t
r
0
1
2
3
1
2
3
4
5
6
7
8
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
140
120
SWITCHING ENERGY (µJ)
V
I
DD
90
80
SWITCHING ENERGY (µJ)
= 667V
= 667V
R
= 5Ω
D
J
= 4A
T = 125°C
J
70
60
50
40
30
20
10
0
E
off
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
L = 100µH
E
ON
includes
diode reverse recovery.
E
on
100
80
60
40
20
0
E
off
1-2004
E
on
050-7118 Rev A
4
5
6
7
8
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
1
2
3
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
Typical Performance Curves
APT1003RKLL
10%
Gate Voltage
T
J
125°C
90%
Gate Voltage
T
J
125°C
t
d(on)
Drain Current
t
d(off)
Drain Voltage
t
r
5%
90%
10%
Switching Energy
5%
Drain Voltage
90%
10%
0
t
f
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
V
DD
I
C
V
CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-220AC Package Outline
1.39 (.055)
0.51 (.020)
Drain
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
16.51 (.650)
14.23 (.560)
3.42 (.135)
2.54 (.100)
4.08 (.161) Dia.
3.54 (.139)
6.35 (.250)
MAX.
14.73 (.580)
12.70 (.500)
0.50 (.020)
0.41 (.016)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
Gate
1.01 (.040) 3-Plcs.
0.38 (.015)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
1.77 (.070) 3-Plcs.
1.15 (.045)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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Embedded System
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