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AH227-CHIP2

Description
Variable Capacitance Diode, Very High Frequency to KA Band, 4pF C(T), 15V, Gallium Arsenide, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size179KB,4 Pages
ManufacturerThales Group
Download Datasheet Parametric View All

AH227-CHIP2 Overview

Variable Capacitance Diode, Very High Frequency to KA Band, 4pF C(T), 15V, Gallium Arsenide, Hyperabrupt

AH227-CHIP2 Parametric

Parameter NameAttribute value
MakerThales Group
package instructionO-XEMW-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage15 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Nominal diode capacitance4 pF
Diode component materialsGALLIUM ARSENIDE
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO KA BAND
JESD-30 codeO-XEMW-F2
Number of components1
Number of terminals2
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
minimum quality factor2000
Maximum reverse current0.1 µA
Reverse test voltage10 V
surface mountYES
Terminal formFLAT
Terminal locationEND
Varactor Diode ClassificationHYPERABRUPT
Base Number Matches1
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