Variable Capacitance Diode, Very High Frequency to KA Band, 2.8pF C(T), 30V, Gallium Arsenide, Abrupt
| Parameter Name | Attribute value |
| Maker | Thales Group |
| package instruction | O-XEMW-F2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 30 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 20% |
| Minimum diode capacitance ratio | 3.7 |
| Nominal diode capacitance | 2.8 pF |
| Diode component materials | GALLIUM ARSENIDE |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY TO KA BAND |
| JESD-30 code | O-XEMW-F2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| Package body material | UNSPECIFIED |
| Package shape | ROUND |
| Package form | MICROWAVE |
| Certification status | Not Qualified |
| minimum quality factor | 5000 |
| Maximum reverse current | 0.1 µA |
| Reverse test voltage | 10 V |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | END |
| Varactor Diode Classification | ABRUPT |
| Base Number Matches | 1 |
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