K6X0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0
1.0
History
Initial draft
Finalized
- Changed I
CC
from 10mA to 5mA
- Changed I
CC1
from 8mA to 7mA
- Changed I
CC2
from 35mA to 25mA
- Changed I
SB
from 3mA to 0.4mA
- Changed I
DR
for K6X0808C1D-F 15µA to 10µA
- Changed I
DR
for K6X0808C1D-Q 25µA to 20µA
- Errata correction
Draft Data
October 09, 2002
December 16, 2003
Remark
Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
December 2003
K6X0808C1D Family
32Kx8 bit Low Power full CMOS Static RAM
FEATURES
•
Process Technology: Full CMOS
•
Organization: 32K x 8
•
Power Supply Voltage: 4.5~5.5V
•
Low Data Retention Voltage: 2V(Min)
•
Three state output and TTL Compatible
•
Package Type: 28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6X0808C1D families are fabricated by SAMSUNG′s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family Operating Temperature Vcc Range
Speed
Standby
(I
SB1
, Max)
15µA
4.5~5.5V
K6X0808C1D-Q
Automotive(-40~125°C)
55
1)
/70ns
25µA
25mA
Operating
(I
CC2,
Max)
PKG Type
28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
28-SOP-450, 28-TSOP1-0813.4F
K6X0808C1D-F
Industrial(-40~85°C)
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
FUNCTIONAL BLOCK DIAGRAM
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
Clk gen.
Precharge circuit.
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
28-TSOP
Type1 - Forward
23
22
21
20
19
18
17
16
15
Row
Addresses
Row
select
Memory array
28-DIP
28-SOP
22
21
20
19
18
17
16
15
A3
A4
A5
A6
A7
A12
A14
VCC
WE
A13
A8
A9
A11
OE
14
13
12
11
10
9
8
7
6
5
4
3
2
1
15
16
17
18
19
20
28-TSOP
Type1 - Reverse
21
22
23
24
25
26
27
28
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
I/O
1
I/O
8
Data
cont
I/O Circuit
Column select
Data
cont
Column Addresses
Pin Name
CS
OE
WE
A
0
~A
14
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Pin Name
I/O
1
~I/O
8
Vcc
Vss
NC
Function
CS
Data Inputs/Outputs
WE
Power
Ground
No connect
OE
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.0
December 2003
K6X0808C1D Family
PRODUCT LIST
Industrial Temp. Products(-40~85°C)
Part Name
K6X0808C1D-DF55
K6X0808C1D-DF70
K6X0808C1D-GF55
K6X0808C1D-GF70
K6X0808C1D-TF55
K6X0808C1D-TF70
K6X0808C1D-RF55
K6X0808C1D-RF70
Function
28-DIP, 55ns, LL Pwr
28-DIP, 70ns, LL Pwr
28-SOP, 55ns, LL Pwr
28-SOP, 70ns, LL Pwr
28-TSOP-F, 55ns, LL Pwr
28-TSOP-F, 70ns, LL Pwr
28-TSOP-R, 55ns, LL Pwr
28-TSOP-R, 70ns, LL Pwr
CMOS SRAM
Automotive Temp. Products(-40~125°C)
Part Name
K6X0808C1D-GQ55
K6X0808C1D-GQ70
K6X0808C1D-TQ55
K6X0808C1D-TQ70
Function
28-SOP, 55ns, L Pwr
28-SOP, 70ns, L Pwr
28-TSOP-F, 55ns, L Pwr
28-TSOP-F, 70ns, L Pwr
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
OE
X
1)
H
L
X
1)
WE
X
1)
H
H
L
I/O
High-Z
High-Z
Dout
Din
Mode
Deselected
Output Disabled
Read
Write
Power
Standby
Active
Active
Active
1. X means don′t care (Must be in high or low states)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.5 to V
CC+
0.5V(Max. 7.0V)
-0.3 to 7.0
1.0
-65 to 150
-40 to 85
-40 to 125
Unit
V
V
W
°C
°C
°C
Remark
-
-
-
-
K6X0808C1D-F
K6X0808C1D-Q
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 1.0
December 2003
K6X0808C1D Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Min
4.5
0
2.2
-0.5
3)
Typ
5.0
0
-
-
CMOS SRAM
Max
5.5
0
Vcc+0.5
2)
0.8
Unit
V
V
V
V
Note:
1. Industrial Product: T
A
=-40 to 85°C, Otherwise specified
Automotive Product: T
A
=-40 to 125°C, Otherwise specified
2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.
3. Undershoot: -3.0V in case of pulse width≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1
)
(f=1MHz, TA=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
V
OL
V
OH
I
SB
I
SB1
V
IN
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
, V
IO
=V
SS
to Vcc
I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA, CS≤0.2V,
V
IN
≤0.2V
IN
≥Vcc
-0.2V
Cycle time=Min,100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS≥Vcc-0.2V, Other inputs=0~Vcc
K6X0808C1D-F
K6X0808C1D-Q
Test Conditions
Min
-1
-1
-
-
-
-
2.4
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
5
7
25
0.4
-
0.4
15
25
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
µA
4
Revision 1.0
December 2003
K6X0808C1D Family
AC OPERATING CONDITIONS
TEST CONDITIONS
(Test Load and Test Input/Output Reference)
Input pulse level: 0.8 to 2.4V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load (See right): C
L
=100pF+1TTL
C
L
=50pF+1TTL
C
L
1)
CMOS SRAM
1. Including scope and jig capacitance
AC CHARACTERISTICS
(Vcc=4.5~5.5V, Commercial product: T
A
=0 to 70°C, Industrial product: T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
55
1)
ns
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
Read
Chip select to low-Z output
Output enable to low-Z output
Chip disable to high-Z output
Output disable to high-Z output
Output hold from address change
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write
Write pulse width
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
1. The parameter is tested with 50pF test load.
70ns
Min
70
-
-
-
10
5
0
0
10
70
60
0
60
50
0
0
30
0
5
Max
-
70
70
35
-
-
30
30
-
-
-
-
-
-
-
25
-
-
-
Units
Max
-
55
55
25
-
-
20
20
-
-
-
-
-
-
-
20
-
-
-
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
55
-
-
-
10
5
0
0
10
55
45
0
45
40
0
0
25
0
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
Symbol
V
DR
I
DR
t
SDR
t
RDR
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
K6X0808C1D-F
K6X0808C1D-Q
See data retention waveform
Test Condition
Min
2.0
-
-
0
5
Typ
-
-
-
-
-
Max
5.5
10
20
-
-
ms
Unit
V
µA
5
Revision 1.0
December 2003
京公网安备 11010802033920号
EEWORLD
