CM4957 datasheet, PDF - EEWORLD Datasheet

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CM4957: DescriptionPNP HIGH FREQUENCY SILICON TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size177KB，3 Pages; ManufacturerCentral Semiconductor

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CM4957 Overview

PNP HIGH FREQUENCY SILICON TRANSISTOR

CM4957 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	TO-72
package instruction	CYLINDRICAL, O-MBCY-W4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.03 A
Collector-based maximum capacity	2 pF
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	1200 MHz
Base Number Matches	1

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DATA SHEET

CM4957

PNP HIGH FREQUENCY

SILICON TRANSISTOR

TO-72 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR CM4957 is a Silicon PNP RF Transistor, mounted in a hermetically sealed

package, designed for high frequency amplifier and non-saturated switching applications. This device is a

replacement for the 2N4957.

MAXIMUM RATINGS (TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current - Continuous

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage

Junction Temperature

SYMBOL

VCBO

VCEO

VEBO

TJ,Tstg

3.0

200

300

-65 to +200

UNITS

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

ICBO

BVCBO

BVCEO

BVEBO

hFE

Ccb

hfe

Gpe

TEST CONDITIONS

VCB=10V

IC=100µA

IC=1.0mA

IE=100µA

VCE=10V, IC=2.0mA

VCE=10V, IC=2.0mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VCE=10V, IC=2.0mA, f=1.0kHz

VCE=10V, IC=4.0mA, f=450MHz

MIN

3.0

1200

1.6

TYP

MAX

100

UNITS

MHz

150

2500

2.0

200

(Continued)

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