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MRF9060MR1

Description
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
CategoryDiscrete semiconductor    The transistor   
File Size417KB,12 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MRF9060MR1 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA

MRF9060MR1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Objectid1949512578
Parts packaging codeSOF
package instructionFLANGE MOUNT, R-PDFM-F2
Contacts2
Manufacturer packaging codeCASE 1265-08
Reach Compliance Codeunknow
compound_id10895150
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-270AA
JESD-30 codeR-PDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)223 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF9060M/D
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
24 mm, 13 inch Reel.
TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
44 mm, 13 inch Reel.
MRF9060MR1
MRF9060MBR1
945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265–07, STYLE 1
TO–270 DUAL LEAD
PLASTIC
MRF9060MR1
CASE 1337–01, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
–0.5, +15
223
1.79
–65 to +150
175
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.56
Unit
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
Motorola, Inc. 2002
DEVICE DATA
MRF9060MR1 MRF9060MBR1
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