FE AT UR ES
Total Integration of GaAs MMIC
Attenuators, Silicon MMIC Amplifiers,
and TTL Drivers
HDI
MODEL NO.
DA0900
Dual Attenuator / Amplifier
Ultra Small 1.3 x 1.5 Surface Mount
Package
Phase and Amplitude Balance
Channel to Channel
CONTRASTING
COLOR BEAD
1.500
1
RF IN (A)
GND
16 dB
8 dB
4 dB
2 dB
GND
8
.015
±.002
16 PLACES
PART
IDENTIFICATION
.010
±.002
16 PLACES
RF IN (B)
RF OUT (A)
GND
32 dB
+12 V
+5 V
1 dB
GND
RF OUT (B)
9
16
.200
.200
(A) 1
RF IN
ATTEN
6 SECTION
AMPLIFIER
16 (A)
RF OUT
GND 2
16 dB 3
.100
TYP
.200
15 GND
•
•
•
•
•
ATTEN
6 SECTION
•
14 32 dB
13 +12V
12 +5V
1.300
8 dB 4
4 dB 5
2 dB 6
GND 7
•
•
11 1 dB
10 GND
(B) 8
RF IN
.23
.142 TYP
.032 TYP
.xx = .02
.xxx = .010
9 (B)
RF OUT
AMPLIFIER
.005
G U ARAN TE ED P ERF OR MA NCE
Parameter
GAIN (dB)
Cnannel
To Channel
Min Typ Max Units
20
3
34
TTL
300
10
50
MHz
mA
mA
Conditions
At +5 VDC Supply
At +12 VDC Supply
6 Line
Logic “0” = Thru
Logic “1” = Attenuation
VIH = +2.7V
VIL = +0.5V
ISO (dB)
VSWR
TYP I CA L PE RF O RM AN C E
a t 25°C
Operating Frequency
DC Current
Control Type
2.0
50
100
1.8
40
80
ISO
Control Current
High
Low
1.6
30
60
Insertion Gain
Noise Figure
Isolation
Channel to Channel
Phase Vs. Attenuation
Balance
14
60
40
1.4
20
40
GAIN
Attenuation
1.2
10
20
VSWR
LSB
Range
Accuracy
0
0
16
7
66
54
±6
±2
1
±40
±40
20
10
±10
±5
63
0
µA
µA
dB
dB
dB
dB
DEG
DEG
dB
dB
dB
dB
OHMS
nSec
nSec
dBm
dBm
°C
20 - 100 MHz
100 - 300 MHz
Channel to Channel
1, 2, 4, 8, 16, 32
±(0.25
dB
±2%
of Atten.
Setting in dB)
Channel to Channel
1.0
0
0
10
40
100
400
1000
Balance
FREQUENCY (MHz)
VSWR
Impedance
Switching Speed
Transition (Rise/Fall) Time
RF Power
Operate
No Damage
0.2
1.2/1
50
36
20
+5
-55
+25
±0.5
1.4/1
50
+0
+20
+85
50% TTL to 90% / 10% RF
90% / 10% or 10% / 90% RF
0.1 dB Compression
TA
Operating Temperature
DA I C O
In d u s t r i e s
Rev. - / Iss. 1
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