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NX8508CG53-CC-A

Description
LASER DIODE W/MONITOR,1.53UM PEAK WAVELENGTH,FOM-SC
CategoryLED optoelectronic/LED    photoelectric   
File Size135KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

NX8508CG53-CC-A Overview

LASER DIODE W/MONITOR,1.53UM PEAK WAVELENGTH,FOM-SC

NX8508CG53-CC-A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompli
Maximum forward current0.15 A
Maximum forward voltage1.6 V
Installation featuresTHROUGH HOLE MOUNT
Maximum operating temperature85 °C
Minimum operating temperature-20 °C
Optoelectronic device typesLASER DIODE
peak wavelength1530 nm
Maximum response time1e-10 s
Semiconductor materialInGaAsP
surface mountNO
Base Number Matches1
PRELIMINARY DATA SHEET
LASER DIODE
NX8508 Series
1 470 TO 1 610 nm InGaAsP MQW-DFB LASER DIODE
COAXIAL MODULE FOR 2.5 Gb/s, CWDM
DESCRIPTION
The NX8508 Series is a 1 470 to 1 610 nm Multiple Quantum Well (MQW)
structured Distributed Feed-Back (DFB) laser diode coaxial module with an
internal optical isolator.
These devices are ideal for 2.5 Gb/s CWDM application.
FEATURES
• Internal optical isolator
• Peak emission wavelength
• Optical output power
• Operating case temperature range
• Side mode suppression ratio
• InGaAs monitor PIN-PD
• With SC-UPC connector
• Based on Telcordia reliability
λ
p
= 1 470 to 1 610 nm (Based on CWDM)
P
f
= 2.0 mW
T
C
=
−20
to +85°C
SMSR = 40 dB
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PL10433EJ03V0DS (3rd edition)
Date Published March 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices 2003, 2004

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