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RB225T100

Description
30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size300KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RB225T100 Overview

30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

RB225T100 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeTO-220AB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.86 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee1
Maximum non-repetitive peak forward current100 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
Schottky barrier diode
RB225T100
Applications
Switching power supply
Dimensions
(Unit : mm)
4.5±0.3
    0.1
10.0±0.3
    0.1
2.8±0.2
    0.1
Structure
1.2
1.3
5.0±0.2
Features
1) Cathode common type.
(TO-220)
2) Low I
R
3) High reliability
(1) (2) (3)
8.0±0.2
12.0±0.2
15.0±0.4
  0.2
8.0
13.5MIN
(1) (2) (3)
0.7±0.1
0.05
Construction
Silicon epitaxial planar
0.8
2.6±0.5
ROHM :
TO220FN
Manufacture Date
Limits
Symbol
110
V
RM
Reverse voltage (repetitive peak)
Reverse voltage (DC)
110
V
R
30
Average rectified forward current(*1)
Io
100
I
FSM
Forward current surge peak (60Hz/1cyc) (*1)
Junction temperature
150
Tj
Storage temperature
-40 to +150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=99C
Absolute
maximum ratings
(Ta=25C)
Parameter
Unit
V
V
A
A
C
C
Electrical
characteristic
(Ta=25C)
Parameter
Forward voltage
Reverse current
Thermal impedance
Symbol
V
F
I
R
jc
Min.
-
-
-
Typ.
-
-
-
Max.
0.86
400
1.75
Unit
V
μA
C/W
Conditions
I
F
=15A
V
R
=100V
junction to case
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
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