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BTD2150AM3

Description
Low Vcesat NPN Epitaxial Planar Transistor
File Size178KB,5 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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BTD2150AM3 Overview

Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 1/5
BTD2150AM3
Features
Low V
CE
(sat), V
CE
(sat)=0.1 V (typical), at I
C
/ I
B
= 1A / 50mA
Excellent current gain characteristics
Complementary to BTB1424AM3
Pb-free package
Symbol
BTD2150AM3
Outline
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
80
50
6
3
0.6
1
2
150
-55~+150
Unit
V
V
V
A
*1
*2
W
°C
°C
Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.
*2 When mounted on a 40*40*0.7mm ceramic board.
BTD2150AM3
CYStek Product Specification

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Index Files: 133  578  878  2198  1645  3  12  18  45  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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