CYStech Electronics Corp.
Gentral Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 1/4
BTNA14N3
Description
•
The BTNA14N3 is a darlington amplifier transistor
•
Complementary to BTPA64N3
.
Equivalent Circuit
BTNA14N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
30
30
10
0.3
225
150
-55~+150
Unit
V
V
V
A
mW
°C
°C
BTNA14N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 2/4
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCE=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
MHz
pF
Characteristic Curves
Current Gain vs Collector Current
100000
Saturation Voltage---(mV)
HFE@VCE=5V
Current Gain---
HFE
10000
VCE(SAT)@IC=1000IB
Saturation Voltage vs Collector Current
10000
1000
1000
1
10
100
1000
Collector Current---IC(mA)
100
1
10
100
1000
Collector Current ---IC(mA)
BTNA14N3
CYStek Product Specification
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Spec. No. : C214N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 3/4
ON Voltage vs Collector Current
10000
10000
Saturation Voltage---(mV)
ON Voltage --- (mV)
VBE(SAT)@IC=1000IB
VBE(ON)@VCE=5V
1000
1000
1
10
100
1000
Collector Current ---IC(mA)
100
0.1
1
10
100
1000
Collector Current ---IC(mA)
Cutoff Frequency vs Collector Current
1
Cutoff Frequency---FT(GHZ)
PD - Ta
250
Power Dissipation---PD(mW)
100
200
150
100
50
0
FT@VCE=5V
0.1
1
10
Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature ---Ta(℃ )
BTNA14N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C203N3-H
Issued Date : 2002.05.11
Revised Date : 2002.12.23
Page No. : 4/4
A
L
3
B
1
2
S
Marking:
TE
1N
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
H
K
J
*: Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes:
1.Dimension and tolerance based on our Spec. dated Feb. 18,2002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA14N3
CYStek Product Specification
京公网安备 11010802033920号
EEWORLD
