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TQPHT

Description
0.5 um pHEMT Foundry Service
File Size201KB,5 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Download Datasheet View All

TQPHT Overview

0.5 um pHEMT Foundry Service

Production Process
TQPHT
0.5 um pHEMT Foundry Service
Features
Metal 2
Dielectric
Metal 1
Dielectric
MIM Metal
Metal 2 - 4um
Dielectric
Metal 1 - 2um
Metal 1
NiCr
Isolation Implant
Isolation Implant
Nitride
N+
Pseudomorphic
Channel
Metal 0
pHEMT
MIM Capacitor
Semi-Insulating GaAs Substrate
NiCr Resistor
0.5 um pHEMT Device Cross-Section
D-Mode, -0.8 V Vp
InGaAs Active Layer pHEMT
Process
0.5 um Optical Lithography
Gates
17 V D-G Breakdown Voltage
High Density Interconnects:
2 Global
1 Local
High-Q Passives
Thin Film Resistors
High Value Capacitors
Backside Vias Optional
Based on Production 0.25 µm
pHEMT and Passives Processes
TOM3 FET Models Available
General Description
TriQuint’s 0.5 µm pHEMT process is based on our production
released 0.25 µm gate process. TQPHT substitutes lower cost
optical lithography in place of e-beam and adds TriQuint’s
unique thick metal scheme. This process is targeted for high
efficiency and linearity in power amplifiers, low noise amplifiers,
and linear, low loss and high isolation RF switch applications.
The TQPHT process offers a D-Mode pHEMT with a –0.8 V
pinch off. The three metal interconnecting layers are encapsu-
lated in a high performance dielectric that allows wiring flexibil-
ity, optimized die size and plastic packaging simplicity. Precision
NiCr resistors and high value MIM capacitors are included al-
lowing higher levels of integration, while maintaining smaller,
cost –effective die sizes.
Applications
Highly Efficient and Linear
Power Amplifiers
Low Loss, High Isolation
Switches for Wireless Trans-
ceivers and Basestations
Higher Supply Voltage Applica-
tions
Integrated RF Front Ends–
LNA, SW, PA
Fully Released
Production Process
Page 1 of 5; Rev 2.0 7/22/03
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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