TPCS8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8102
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 16 mΩ (typ.)
High forward transfer admittance: |Y
fs
| = 17 S (typ.)
Low leakage current: I
DSS
=
−10
µA (max) (V
DS
=
−20
V)
Enhancement-mode: V
th
=
−0.5~−1.2
V (V
DS
=
−10
V, I
D
=
−200
µA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
−20
−20
±12
−6
−24
1.5
0.6
46.8
−6
0.15
150
−55
to 150
Unit
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-3R1B
Drain power dissipation
Drain power dissipation
Weight: 0.035 g (typ.)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a, Note 4)
Channel temperature
Storage temperature range
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-05-17
TPCS8102
Thermal Characteristics
Characteristics
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 10 s)
(Note 2b)
Symbol
R
th (ch-a)
R
th (ch-a)
Max
83.3
208
Unit
°C/W
°C/W
Marking
(Note 5)
Type
TPCS8102
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
a)
Device mounted on a glass-epoxy board (a)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
Note 3: V
DD
=
−16
V, T
ch
= 25°C (initial), L = 1.0 mH, R
G
= 25
Ω,
I
AR
=
−6.0
A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
○
on lower right of the marking indicates Pin 1.
※
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
2002-05-17
TPCS8102
Electrical Characteristics
(Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON
)
Drain-source ON resistance
R
DS (ON)
R
DS (ON)
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
|Y
fs
|
C
iss
C
rss
C
oss
t
r
V
DS
=
−10
V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±10 V, V
DS
= 0 V
V
DS
=
−20
V, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 0 V
I
D
=
−10
mA, V
GS
= 12 V
V
DS
=
−10
V, I
D
=
−200
µA
V
GS
=
−2.0
V, I
D
=
−3
A
V
GS
=
−2.5
V, I
D
=
−3
A
V
GS
=
−4
V, I
D
=
−3
A
V
DS
=
−10
V, I
D
=
−3
A
Min
−20
−8
−0.5
8.5
Typ.
30
23
16
17
2740
780
1030
7.6
Max
±10
−10
−1.2
60
38
20
S
pF
pF
pF
mΩ
Unit
µA
µA
V
V
Turn-ON time
Switching time
Fall time
t
on
16
ns
t
f
110
Turn-OFF time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
t
off
Q
g
Q
gs
Q
gd
V
DD
≈ −16
V, V
GS
=
−5
V, I
D
=
−6
A
230
37
27
10
nC
nC
nC
Source-Drain Ratings and Characteristics
(Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Symbol
I
DRP
V
DSF
Test Condition
—
I
DR
=
−6
A, V
GS
= 0 V
Min
—
—
Typ.
—
—
Max
−24
1.2
Unit
A
V
Forward voltage (diode)
3
2002-05-17
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