CYStech Electronics Corp.
General Purpose PNP Digital Transistors (Built-in Resistors)
Spec. No. : C254S3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 1/3
DTA114TS3
Features
•
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
•
Only the on/off conditions need to be set for operation, making device design easy
.
•
Complements the DTC114TS3
Equivalent Circuit
DTA114TS3
SOT-323
R1=10
kΩ
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC (Max)
Pd
Tj
Tstg
Limits
-50
-50
-5
-100
200
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
DTA114TS3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
(Ta=25°C)
Parameter
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
-50
-50
-5
-
-
-
100
7
-
-
-
-
-
-
0.1
-
10
250
-
-
-
-0.5
-0.5
-0.3
V
V
V
uA
uA
V
Spec. No. : C254S3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 2/3
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-50V
VEB=-4V
IC=-10mA, IB=-1mA
600
-
VCE=-5V, IC=-1mA
13
kΩ -
-
MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---
HFE
100
100
HFE@VCE=5V
10
0.1
1
10
100
Collector Current---IC(mA)
VCE(SAT)@IC=10IB
10
1
10
Collector Current---IC(mA)
100
PD - Ta
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTA114TS3
CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
3
A
Spec. No. : C254S3
Issued Date : 2002.06.01
Revised Date : 2002.11.02
Page No. : 3/3
Marking:
A1
Q
Lp
detail Z
W
B
C
1
e1
e
D
bp
2
TE
6E
E
A
Z
θ
He
0
1
scale
2 mm
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
v
A
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM
A
A1
bp
C
D
E
e
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
-
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
-
0.0079
-
-
-
Millimeters
Min.
Max.
0.65
-
2.00
2.25
0.15
0.45
0.13
0.23
0.2
-
0.2
-
10°
0°
Notes:
1.Dimension and tolerance based on our Spec. dated Feb. 27.002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
•
Lead: 42 Alloy ; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYStek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTA114TS3
CYStek Product Specification
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