CYStech Electronics Corp.
PNP Digital Transistors (Built-in Resistor)
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 1/4
DTA143TN3
Features
•
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
•
The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
•
Only the on/off conditions need to be set for operation, making device design easy.
•
Complements the DTC143TN3
Equivalent Circuit
DTA143TN3
Outline
SOT-23
R1=4.7
kΩ
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Limits
-50
-50
-5
-100
200
625
150
-55~+150
Unit
V
V
V
mA
mW
R
θJA
Tj
Tstg
°C/W
°C
°C
DTA143TN3
CYStek Product Specification
CYStech Electronics Corp.
Electrical Characteristics
(Ta=25°C)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
f
T
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 2/4
Min. Typ. Max. Unit
Test Conditions
-50
-
-
V I
C
=-50µA
-50
-5
-
-
-
100
3.29
-
-
-
-
-
0.1
-
4.7
250
-
-
-0.5
-0.5
-0.3
V
V
µA
µA
V
I
C
=-1mA
I
E
=-50µA
V
CB
=-50V
V
EB
=-4V
I
C
=-5mA, I
B
=-0.25mA
600
-
V
CE
=-5V, I
C
=-1mA
6.11 kΩ -
-
MHz V
CE
=-10V, I
C
=-5mA, f=100MHz *
* Transition frequency of the device
DTA143TN3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=20IB
Saturation Voltage---(mV)
100
0.1
1
10
Collector Current---IC(mA)
100
Current Gain---HFE
100
10
0.1
1
10
100
Collector Current---IC(mA)
Power Derating Curve
250
Power Dissipation---PD(mW)
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
DTA143TN3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C269N3
Issued Date : 2003.04.29
Revised Date :
Page No. : 4/4
A
L
3
B
1
2
S
Marking:
6F
V
G
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
J
C
D
K
H
*:Typical
DIM
A
B
C
D
G
H
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes :
1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
•
Lead : 42 Alloy ; solder plating
•
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
•
CYStek reserves the right to make changes to its products without notice.
•
CYSrek
semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTA143TN3
CYStek Product Specification
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