MC74HC1G32
Single 2-Input OR Gate
The MC74HC1G32 is a high speed CMOS 2−input OR gate
fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The MC74HC1G32 output drive current is 1/2 compared to
MC74HC series.
Features
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MARKING
DIAGRAMS
•
•
•
•
•
•
•
High Speed: t
PD
= 7 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
High Noise Immunity
Balanced Propagation Delays (t
pLH
= t
pHL
)
Symmetrical Output Impedance (I
OH
= I
OL
= 2 mA)
Chip Complexity: FET = 44
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
5
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
1
5
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
H4 M
G
G
1
H4 M
G
G
M
IN B
1
5
V
CC
H4 = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
IN A
2
PIN ASSIGNMENT
GND
3
4
OUT Y
1
2
3
IN B
IN A
GND
OUT Y
V
CC
Figure 1. Pinout
4
5
FUNCTION TABLE
IN A
IN B
≥
1
Inputs
OUT Y
A
B
L
H
L
H
Y
L
H
H
H
L
L
H
H
Output
Figure 2. Logic Symbol
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 13
Publication Order Number:
MC74HC1G32/D
MC74HC1G32
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC70−5/SC−88A/SOT−353 (Note 1)
SOT23−5/TSOP−5/SC59−5
SC70−5/SC−88A/SOT−353
SOT23−5/TSOP−5/SC59−5
Parameter
Value
*0.5
to
)7.0
*0.5
to V
CC
)0.5
*0.5
to V
CC
)0.5
$20
$20
$12.5
$25
*65
to
)150
260
)150
350
230
150
200
Level 1
UL 94 V−0 @ 0.125 in
u2000
u200
N/A
±500
V
Unit
V
V
V
mA
mA
mA
mA
°C
°C
°C
°C/W
mW
I
LATCHUP
Latchup Performance
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm by 1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Parameter
Min
2.0
0.0
0.0
*55
0
0
0
0
Max
6.0
V
CC
V
CC
)125
1000
600
500
400
Unit
V
V
V
°C
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
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2
MC74HC1G32
DC ELECTRICAL CHARACTERISTICS
V
CC
Symbol
V
IH
Parameter
Minimum High−Level
Input Voltage
Test Conditions
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
V
IN
= V
IH
or V
IL
I
OH
= −20
mA
2.0
3.0
4.5
6.0
4.5
6.0
2.0
3.0
4.5
6.0
4.5
6.0
6.0
6.0
1.9
2.9
4.4
5.9
4.18
5.68
2.0
3.0
4.5
6.0
4.31
5.80
0.0
0.0
0.0
0.0
0.17
0.18
0.1
0.1
0.1
0.1
0.26
0.26
±0.1
1.0
Min
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
1.9
2.9
4.4
5.9
4.13
5.63
0.1
0.1
0.1
0.1
0.33
0.33
±1.0
10
T
A
= 255C
Typ
Max
T
A
v
855C
Min
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
1.9
2.9
4.4
5.9
4.08
5.58
0.1
0.1
0.1
0.1
0.40
0.40
±1.0
40
mA
mA
V
Max
*555C
v
T
A
v
1255C
Min
1.5
2.1
3.15
4.20
0.5
0.9
1.35
1.80
Max
Unit
V
V
IL
Maximum Low−Level
Input Voltage
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
V
IN
= V
IH
or V
IL
I
OH
= −2 mA
I
OH
= −2.6 mA
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 20
mA
V
IN
= V
IH
or V
IL
I
OL
= 2 mA
I
OL
= 2.6 mA
I
IN
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
V
IN
= 6.0 V or GND
V
IN
= V
CC
or GND
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 6.0 ns)
T
A
= 255C
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propagation
Delay, Input A or B to Y
Test Conditions
V
CC
= 5.0 V
C
L
= 15 pF
C
L
= 50 pF
Min
Typ
3.5
20
12
8
7
3
Max
15
T
A
v
855C
Min
Max
20
*555C
v
T
A
v
1255C
Min
Max
25
Unit
ns
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎ Î Î Î ÎÎ Î Î
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î ÎÎ Î Î
Î
Î
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 5.0 V
100
27
20
17
10
125
35
25
21
15
155
90
35
26
20
t
TLH
,
t
THL
Output Transition Time
C
L
= 15 pF
C
L
= 50 pF
ns
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
25
16
11
9
5
125
35
25
21
10
155
45
31
26
10
200
60
38
32
10
C
IN
Maximum Input
Capacitance
pF
Typical @ 255C, V
CC
= 5.0 V
10
C
PD
Power Dissipation Capacitance (Note 6)
pF
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
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3
MC74HC1G32
t
r
INPUT
A or B
t
PLH
90%
50%
10%
t
TLH
t
THL
90%
50%
10%
t
PHL
t
f
V
CC
GND
OUTPUT Y
Figure 4. Switching Waveforms
INPUT
OUTPUT
C
L*
*Includes all probe and jig capacitance.
A 1−MHz square input wave is recommended for propagation delay tests.
Figure 5. Test Circuit
ORDERING INFORMATION
Device
MC74HC1G32DFT1G
MC74HC1G32DFT2G
NLVHC1G32DFT2G*
MC74HC1G32DTT1G
SOT23−5/TSOP−5/SC59−5
(Pb−Free)
3000 / Tape & Reel
SC70−5/SC−88A/SOT−353
(Pb−Free)
3000 / Tape & Reel
Package
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
MC74HC1G32
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
G
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
S
1
2
3
−B−
DIM
A
B
C
D
G
H
J
K
N
S
D
5 PL
0.2 (0.008)
M
B
M
N
J
C
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
---
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
---
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
H
K
SOLDER FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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