EEWORLDEEWORLDEEWORLD

Part Number

Search

IRFR9120TRLPBF

Description
MOSFET P-Chan 100V 5.6 Amp
CategoryDiscrete semiconductor    The transistor   
File Size1MB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric Compare View All

IRFR9120TRLPBF Online Shopping

Suppliers Part Number Price MOQ In stock  
IRFR9120TRLPBF - - View Buy Now

IRFR9120TRLPBF Overview

MOSFET P-Chan 100V 5.6 Amp

IRFR9120TRLPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-252AA
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time6 weeks
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)210 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)5.6 A
Maximum drain current (ID)5.6 A
Maximum drain-source on-resistance0.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)42 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 100
V
GS
= - 10 V
18
3.0
9.0
Single
S
FEATURES
0.60
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9120, SiHFR9120)
Straight Lead (IRFU9120, SiHFU9120)
Available in Tape and Reel
P-Channel
Fast Switching
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
S
G
D S
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9120-GE3
IRFR9120PbF
SiHFR9120-E3
DPAK (TO-252)
SiHFR9120TR-GE3
a
IRFR9120TRPbF
a
SiHFR9120T-E3
a
DPAK (TO-252)
SiHFR9120TRL-GE3
a
IRFR9120TRLPbF
a
SiHFR9120TL-E3
a
IPAK (TO-251)
SiHFU9120-GE3
IRFU9120PbF
SiHFU9120-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 100
± 20
- 5.6
- 3.6
- 22
0.33
0.020
210
- 5.6
4.2
42
2.5
- 5.5
- 55 to + 150
260
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
Linear Derating Factor
Linear Derating Factor (PCB
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 10 mH, R
g
= 25
,
I
AS
= - 5.6 A (see fig. 12).
c. I
SD
- 6.8 A, dI/dt
110 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0167-Rev. C, 04-Feb-13
Document Number: 91280
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

IRFR9120TRLPBF Related Products

IRFR9120TRLPBF IRFU9120 IRFR9120PBF IRFR9120TR
Description MOSFET P-Chan 100V 5.6 Amp MOSFET P-Chan 100V 5.6 Amp MOSFET P-Chan 100V 5.6 Amp MOSFET P-Chan 100V 5.6 Amp
Is it Rohs certified? conform to incompatible conform to incompatible
Maker Vishay Vishay Vishay Vishay
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant unknown not_compliant unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V
Maximum drain current (Abs) (ID) 5.6 A 5.6 A 5.6 A 5.6 A
Maximum drain current (ID) 5.6 A 5.6 A 5.6 A 5.6 A
Maximum drain-source on-resistance 0.6 Ω 0.6 Ω 0.6 Ω 0.6 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252AA TO-251AA TO-252AA TO-252AA
JESD-30 code R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSSO-G2
JESD-609 code e3 e0 e3 e0
Number of components 1 1 1 1
Number of terminals 2 3 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 NOT APPLICABLE 260 NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 42 W 42 W 42 W 42 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES YES
Terminal surface Matte Tin (Sn) TIN LEAD Matte Tin (Sn) TIN LEAD
Terminal form GULL WING THROUGH-HOLE GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 NOT APPLICABLE 30 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Parts packaging code TO-252AA TO-251AA TO-252AA -
Contacts 3 3 3 -
Avalanche Energy Efficiency Rating (Eas) 210 mJ 210 mJ 210 mJ -
Shell connection DRAIN - DRAIN DRAIN
Maximum pulsed drain current (IDM) 22 A 22 A 22 A -
max038's problem
Why does the MAX038 I made with this circuit get hot? ??? ??? ??? ??? And it’s very hot? ??? ??? ??? ??? I don’t dare to use it for fear of burning it!!! Experts, please help!!! [font=宋体][size=12pt][/...
326309158 MCU
Seeking advice from prawns
Dear friends, I am troubled by the graduation project. Can you suggest a circuit or chip that can amplify the square wave generated by the microcontroller to drive the speaker directly?...
chenlingyu1990 Microchip MCU
Advantages of Integrated Current Sensing
By Ryan Kehr Many brushed and stepper motor applications must monitor and regulate current. For brushed motors, current information can be used to determine changes in load conditions or to limit star...
alan000345 TI Technology Forum
MSP430 FAQ IO Port Class
Q1: Can the I/O interrupt of 430 reliably respond to the 60ns pulse signal? If a 60ns pulse comes, will the interrupt of 430 be lost? A1: The highest clock supported by the port is 8M, which cannot re...
Jacktang Microcontroller MCU
EEWORLD University ---- TI's Story - IC Genesis
The Story of TI - IC Genesis : https://training.eeworld.com.cn/course/4260...
hi5 Integrated technical exchanges
Fritzing 0.9.1b Download
最近Fritzing 终于又升级了,这是一个开源DIY的软件,Arduino爱好者必备的工具。[img=1097,748]http://fritzing.org/static/img/fritzing-preview-bb.png[/img][img=1095,749]http://fritzing.org/static/img/fritzing-preview-schem.png[/img][i...
dcexpert Microchip MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 69  2196  2862  255  31  2  45  58  6  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号